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We present a study of the conductance of quantum point contacts fabricated in AlGaN/GaN and Si/SiGe heterostructures. The investigated devices differ for typology (split gates and etched devices, respectively) and for the resulting potential profiles. We observe conductance quantization in multiple of 2e2/h units with superimposed anomalous plateaus and/or structures suggesting that correlation effects...
The paper presents upper and lower limitations of nominal radius of liquid drops for rolling along an inclination by considering specified dimensionless Bond number, gravitational force, and Gibbs free energy. The relations between the Bond number and Gibbs free energy are established in this paper to determine the region of nominal radius of seeding droplets and the conditions of rolling mechanism...
The space-charge spectroscopy, EPR, modeling of inhomogeneous strain field with Keating interatomic potential, hole energy calculation with nearest neighbor tight-binding single-particle Hamiltonian with the sp3 basis and the electronic energy levels calculation with solving three-dimensional effective-mass Schro??dinger equation were used to study dense array of Ge quantum dots in Si. The enlargement...
The present paper discusses the strain effects on the conduction and valence bands for Si nanowires using k.p Hamiltonian, where, in addition to the usual radial symmetric strains, the torsional strain, being unique to axial symmetric devices, is also studied. The radial compression/expansion, analogous with the biaxial strain in planar devices, gives linear increase/decrease in the conduction band...
The latest scanning probe technology permits the same probe tip to carry out all of the imaging, characterization and manipulation operations. This multifunctional capability assists in a wide variety of applications, but low endurance and speed continue to be important problems to solve. We decouple the imaging and manipulation aspects of a probe device by implementing a thermoelectric imaging mode...
The authors have demonstrated a simple method to precisely control the number and the position of nanometer-scaled Ge quantum dots (QDs) embedded in SiO2 or Si3N4 tunnel barriers via thermally oxidizing pre-patterned nanostructures. A single Ge QD in the core or twin Ge QDs near the edges of the nanotrench could be realized by modulating the initial nanostructure's dimensions and the spacer's materials...
The emergence of an ultrasensitive sensor technology based on silicon nanowires requires both the fabrication of nanoscale diameter wires and the integration with microelectronic processes. Here we demonstrate an atomic force microscopy lithography that enables the reproducible fabrication of complex single-crystalline silicon nanowire field-effect transistors with a high electrical performance. The...
Si nanowires suitable for MOS transistors used for large area display applications have been fabricated. They were grown using vapor-liquid-solid (VLS) growth. All important characteristics of the nanowire are controlled. The wire diameter is controlled by patterning the substrate prior to the wire growth. Over 99% of the nanowires grow in the <111> direction vertical to the <111> substrate...
We present the development of a single carbon nanotube (CNT) based optical detector in the infrared (IR) region. CNTs have been found to be sensitive under IR radiation and they could be used as IR sensing elements. When a CNT is manipulated between two metal electrodes, two contacts are formed at the CNT-metal interfaces. The contact conditions play an important role in IR detection. Current results...
Silicon quantum dots (q-dots) have been prepared through ultrasound treatments of light-emitting porous silicon layers (PSL) electrochemically etched from a p-type crystalline silicon (c-Si). The sonication treatments allowed separating the porous fraction from the bulk of c-Si as well as to mechanically reduce the dot dimensions. The ultrasound processes have been carried out in two different organic...
Stacked multichannel transistor architectures were proposed recently which possess very attractive electrical characteristics on low leakage current and high driving current per layout area. However, due to complex manufacturing process, the process variation effect is inevitable and whose impact is unknown. Therefore, this study investigates the impact of process variation on 15-nm-gate stacked multichannel...
The presented hybrid material consists of a porous silicon matrix and precipitated metal nanostructures within the pores. The porous silicon is achieved by wet etching of a silicon wafer, offering straight pores grown perpendicular to the surface. Ferromagnetic metals are electrochemically deposited within the pores leading to a composite material merging the electronic properties of silicon and the...
Impurity scattering is expected to be one of the most serious limiting factor of the performances of devices based on Si nanowires. Dopants are a very special class of impurities, because they are introduced on purpose to design devices with the desired properties and thus are the ultimate source of carrier scattering. By definition, at device operation temperatures, a dopant is ionized. Nevertheless,...
Excellent resistance switching properties such as fast switching time (< 50 ns), high on/off ratio (> 106), good retention (> 6 years) and endurance (> 105) are observed in nanoscale amorphous silicon based RRAM (resistive random access memory). To successfully integrate the RRAM array, circuit models of the device characteristics and effects of device configuration such as crosstalk between...
We study the coherent transport of electrons through a uniformly doped Silicon quantum wire in the presence of one impurity in the channel at room temperature using fully 3D Non-Equilibrium Green's Functions technique. The potential of the single impurity, assumed to be attractive (a donor), is self-consistently calculated via Poisson equation coupled with Schro??dinger equation in the effective mass...
Memristors are the two-terminal components that complete the symmetry between the fundamental circuit variables, and they are highly suitable for bioinspired and neural-network-based computational systems due to their inherent memory effect. In this paper we present a fabrication technique that uses only Complementary Metal Oxide Semiconductor (CMOS) processing steps and conventional photolithography,...
In this work we calculate the electron band structure of a silicon periodic nanostructure embedded into SiO2 and describe the computational implementation we used for this purpose. Further, we discuss the influence of nonparabolicity of electron silicon band structure in the dispersion relation of the periodic nanostructure.
The novel composite amorphous/nanocrystalline thin-film silicon has been fabricated by plasma-enhanced CVD using template porous alumina substrate. The layers possess of specific non-planar morphology and contain silicon nanocrystals of 2-4 nm diameter, as well as ??bunches?? of elongated nanocrystals composing honeycomb-like net. The results obtained could be used in new composite materials and structures...
We describe the integration of p-i-n structures for single-ion implant detection with p-type channel-stop regions to eliminate parasitic leakage currents in n-MOS structures while maintaining a single-ion detection capability. The structures are configured for the assembly of a metal-oxide-semiconductor (MOS) spin-qubit architecture based on phosphorus donors in silicon. The detection method is based...
We have developed a full quantum transport simulator for p-type Si nanowire field effect transistors based on the k??p Hamiltonian. The NEGF formalism was employed for transport calculation and the self-consistent calculations were performed. We have constructed the Hamiltonian in the modespace, with its size greatly reduced compared to the full Hamiltonian. A computationally demanding problem of...
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