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Multilayer CrN/TiN protective films were developed at deposition temperatures lower than 200 °C. The mechanical and tribological behaviour were investigated depending on the main technological parameters. The coatings exhibit high nanohardness of 31.3 GPa, excellent adhesion to the substrate and improved resistance to plastic deformations and elastic strain to failure resistance, impaling the enhanced...
Charge trapping properties of Al-ZrO2/Al2O3/ZrO2-SiO2-Si structures were investigated in attempt to elucidate the instability in their C-V hysteresis. The hysteresis in these structures is mainly due to subsequent trapping of electrons and holes injected from the Si substrate. However the competitive process of electron injection from the gate accompanied by the high leakage introduces instability...
This paper presents the design of a novel microstrip divider/combiner using T-type networks. Multiple step dividers were analyzed and designed, starting from the S-parameters representing the N-ports, their electrical specifications, and ending with full-wave simulations. We present here, two different designs with this technology, for 4 and 8 output ports. To validate the design, two prototypes working...
Wide bandgap semiconductors enable high voltage (10 kV and more) switches. As a consequence, new packaging solutions are required to prepare the ground for such devices. The metallized ceramic substrate is a well-known and established technology for voltages up to 3.3kV, but it exhibits some weaknesses at higher voltages: due to its manufacturing process, the profile of the metallization is sharp...
This paper investigates substrate biasing effects in a monolithically-integrated half-bridge stage rated for 600 V/20 A and fabricated in a lateral AlGaN/GaN-on-Si technology. On-resistance degradation effects caused by the common substrate potential are analyzed and explained for the monolithic half-bridge stage operating in a 400 V-synchronous buck converter. The detailed analysis of an ungated...
Lateral GaN-on-Si HEMT technology enables integrated high-voltage half-bridges with gate drivers. However, the capacitive coupling through a common conductive substrate influences switching characteristics. The measured hard-switching turn-on time with floating substrate increased to over 16 ns as compared to conventional source-connected substrate (1 ns), switching 300 V/4A with GaN ICs comprising...
This paper proposes a single-feed, compact, metasurface-based antenna with circularly-polarized (CP) radiation for the Global Positioning System (GPS) receivers. The antenna consists of a square patch on the metasurface, which is a periodic lattice of 4 × 4 square metallic patches arranged on a grounded dielectric substrate. The CP radiation is obtained by truncating corners of the patch radiator...
In this paper, we propose a compact frequency reconfigurable (FR) multiple-inputmultiple-output (MIMO) antenna in a overall size of 51 × 53 × 0.8 mms. The MIMO antenna consists of two symmetrical FR ones using two PIN diodes on ground plane and has a simple bias circuit without capacitor. By switching the PIN diodes, the FR MIMO antenna can operates in the three states covering bands of tte universal...
In this paper is presented a fault detection method for a biological wastewater treatment process (WWTP) based on residual generation. The residuals were determined by comparing the process model affected by different faults with its neural model. The simulation results demonstrate that this approach is efficient for detecting faults which occurs in biotechnological processes.
This work presents the operation of a PCB-embedded diode-clamped multilevel-converter integrated circuit (IC) fabricated in a lateral, high-voltage AlGaN/GaN-on-Si heterojunction technology. It is demonstrated, that PCB-embedding is an appropriate assembly technique for lateral power ICs with high-integration levels. By placing DC-link capacitors onto the IC-package, parasitc inductances in the power...
In this paper, a novel antenna suitable for wearable LoRa devices is introduced. Its size is just 42.5 × 45 mm2, similar to the size of a watch, thanks to the advantage of a wire-patch antenna structure. The proposed antenna operates at 868MHz frequency band with the realized gain up to 0.4 dBi. This antenna is proved to be better than former designs by obtaining azimuthal polarization which reduces...
This paper gives a general overview on the methods to reduce interconnect resistance and capacitance in a standard CMOS technology followed by a discussion on the physical constraints that dictate the minimum achievable loading. A newly demonstrated method that uses carbon-nanotube to assist the formation of vertically aligned porous structure is studied. The method was shown to be able to reduce...
Two-dimensional crystals of Graphene Oxide (GO) were synthesized by modified Hummers method: flakes of specific lateral size 1–2 μm were obtained as a stable aqueous suspension. The size of GO flakes can be controlled via initial graphite powder grain size as well as via respective filtration or centrifugation of the GO solution. The concentration of GO in the solution can be varied between 4 mg/mL...
Due to its potential applications in optoelectric area, WS2/graphene heterojunction attracts much attention in past years. But until now, modulation of their working performance is still a big challenge for the researchers. In this work, WS2/graphene heterojunctions have been sucessfully fabricated on Si substrate. Moreover, their surface configuration were researched by STM and AFM techniques. Finally,...
We report 1300 nm continuous wave lasing on an on-axis GaP/Si (001) virtual substrate operating up to 60°C with record low threshold current of 27 mA. Ridge and broad area lasers were fabricated with seven layers of p-modulation doped quantum dots and as-cleaved facets.
A lattice-matched AlInGaN digital alloy structure is studied based on the lattice-matched AlInN/GaN ultra-short period superlattices. The numerical findings suggest the potential capabilities of such AlInN/GaN digital alloy in mid- and deep-ultraviolet applications attributed to its tunable bandgap and broadband optical transitions.
Fully functional thin-film blue LED was fabricated by novel means of (1) performing epitaxial growth of a single crystalline InGaN/GaN heterostructure on a recycled graphene/SiC substrate (2) followed by release and transfer of the heterostructure.
A novel pixel structure is demonstrated to provide simple patterning for switchable 2-terminal devices with almost 100% fill factor. A blocking diode is grown directly on top of an organic photodiode to provide a vertically stacked structure that can easily be integrated in series.
III-V semiconductor heterostructures grown on GaSb and InAs substrates are widely used to produce high performance optoelectronic devices operating in the technologically important mid-infrared spectral range. However, these substrates are expensive, only available in small sizes and have low thermal conductivity. Integration of III-Vs onto silicon substrates offers the opportunity to overcome these...
In this work, the characteristics of a Si-solar cell (PV) model is studied. The proposed modelis a four layer system with an ultra-thin film of Fe-InGaAsPlaid above Silicon (Si) substrate and covered by AlON layer that is exposed to air directly. The efficiency is measured by the reflectance power (R) and transmittance power (T). R and T are derived by using the transfer matrix method for both TE...
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