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This paper proposes and designs a switching cell using paralleled gallium nitride (GaN) high-electron-mobility transistor (HEMTs) in the minimized, symmetric power and gate loops. Based on the design, 1Ω gate resistor was successfully applied to speed up the switching transient. The switching cell can be easy to replace on the mother board thanks to the pluggable connector and the cell owns unique...
Insulated gate bipolar transistors (IGBTs) are usually connected in series to form high-voltage switches in power electronics applications. However, the series operation of IGBTs is not easy due to the unbalanced voltage sharing between them, especially during the switching transients and the tail-current period. In this paper, a hybrid active gate drive is presented for both switching loss reduction...
Gallium Nitride (GaN) based power devices have been demonstrated to deliver higher energy efficiency than their Silicon (Si) counterparts for 200–1.2kV rated applications. The benefits of GaN technologies and their market potential will be highlighted in this paper together with the main challenges that GaN-based power systems need to overcome to reach their full potential and finally enter the market...
Targeting the development of a silicon carbide (SiC) inverter for electric vehicle/hybrid electric vehicle (EV/HEV) applications, the design considerations of the gate driver for the adopted SiC metal-oxide-semiconductor field-transistor (MOSFET) power modules are presented. Given the system power density requirement, the gate driver design challenges for the commercial off-the-shelf (COTS) SiC modules...
This paper presents a comparative study on high-frequency active rectifier-based zero voltage soft-switching (ZVS) resonant dc-dc power converters with Gallium Nitride Heterojunction-Field-Effect-Transistor (GaN-HFET) for inductive power transfer (IPT) systems. The two types of active rectifiers, i.e. high-frequency bridgeless rectifier (BLREC) and totem-pole rectifier (TPREC) are adopted for the...
Although the hybrid switch consisting of high power Si IGBT and low power SiC MOSFET achieves reduction of losses and cost, there is a severe concern of its short-circuit capability due to its internal SiC MOSFET with small die size. Experimental study shows that the short-circuit capability of hybrid switch is limited by that of SiC MOSFET. The physical mechanism of short-circuit capability of SiC...
Bi-directional switches, also called four quadrant switches (FQS), are the basic building blocks in many power converter circuits, such as cyclo-converters, matrix converters etc. Conventional approaches to realize bi-directional switch involves combination of unidirectional controllable blocking device (IGBT or MOSFET) and diode. In this approach, current flows through multiple devices for any direction...
The advancements in wide-band-gap (WBG) devices are enabling applications of power electronics converters coupled directly to medium voltage and incorporating galvanic insulation within the converter using high-frequency solid-state transformers. This paper presents the design and the characterization results of a SiC H-bridge converter suitable for up to 100 kVA single-phase ac-dc modular solid-state...
This paper describes the effect of MOSFET internal capacitances on the channel current during the turn-on switching transition: an intrinsic theoretical switching speed limit is found and detailed mathematically. The set of analytical equations is solved and the effect of the displacement currents is highlighted with ideal simulated waveforms. A laboratory experiment is thus performed, in order to...
GaN-FETs are attractive switching devices for their fast switching capability. However, they often suffer from the oscillatory false triggering, i.e. a series of self-sustaining repetitive false triggering induced after a fast switching. The purpose of this paper is to derive a design instruction to prevent this phenomenon. According to the previous study, the oscillatory false triggering was found...
Z-source inverters (ZSIs), compared to the conventional two-stage architecture, embrace some interesting features, like the reduced size and complexity of the entire conversion system. Many research activities have been established to improve the performance of the so-called ZSI since it has been proposed in 2003, and several modifications have been introduced since then. These modifications include...
An edge-resonant soft-switching time-sharing (TS) multiple-input (MI) dc-dc converter is introduced in this paper. The proposed converter can achieve high efficiency with zero-current switching (ZCS) and zero-voltage switching (ZVS). The zero-current switching (ZCS) can be realized on switch turned-on states, and the zero-voltage switching (ZVS) can be realized on switch turned-off states. In addition,...
In this study, design considerations of gate driver for silicon carbide (SiC) power devices is discussed. The work is focused in minimizing the common-mode current injection into the control circuit, thereby adapting the gate circuit to operate at higher dv/dt of fast switching transients. By reducing the common-mode interference with the control circuit, the signal integrity can be increased, spurious...
SiC-MOSFETs have attracting increasing attention because of their outstanding characteristics that contributes to high efficiency and high power density of power converters. However, compared to conventional Si-IGBTs, SiC-MOSFETs are susceptible to false triggering, because they tend to generate large switching noise due to ultrafast switching capability and have a lower threshold voltage in high...
Active gate driving has been shown to provide reduced circuit losses and improved switching waveform quality in power electronic circuits. An integrated active gate driver with 150 ps resolution has previously been shown to offer the expected benefits in GaN-based converters. However, the use of low-voltage, high-speed transistors limits its output voltage range to 5 V, too low for many emerging SiC...
In this paper, a comparative evaluation between a commercial 3.3 kV/400 A Si-IGBT and a 3.3 kV/400 A SiC MOSFET power module in half-bridge configuration is presented. With a constant current of 250 A, a lower forward voltage (VDS) drop of 1.6 V is obtained for SiC MOSFET at 300 K compared to Si IGBT. At 400 A, the difference is reduced to 1.3 V. SiC MOSFET offers an on-state resistance of 8.7 mΩ,...
1700V SiC modules were built with next-generation SiC MOSFETs, with 25°C RDSON per MOSFET cut approximately 50% from existing commercial SiC MOSFETs. Additionally, the external SiC anti-parallel diode was eliminated in favor of using the SiC MOSFET body diode during the dead time. The resulting 1700V SiC module used only 32% of the SiC chip area, yet reduced the 25°C module RDSON from 8mΩ to 5mΩ,...
This paper proposes a transformer based self-starting boost converter for thermoelectric energy harvesting, which operates even when polarity inversion of thermoelectric generator (TEG) occurs. TEG is used to convert thermal energy into electrical energy. Due to the Seebeck effect, an open circuit voltage of the TEG is proportional to the number of thermocouples in series and to the temperature difference...
In this paper, a resonant switched-capacitor dc-dc converter is proposed for data center application. The proposed converter possesses features such as high efficiency, high power density and light-weight. Zero current switching (ZCS) can be achieved with the resonant operation, which allows the converter operating under high efficiency. Proper switching device selection and in-depth power loss analysis...
Hybrid DC Breakers (HCBs) are crucial components in modern DC systems. Integrated Gate Commutated Thyristors (IGCTs) are widely used in high voltage HCBs due to their controllable turn-off capabilities under high power conditions. The focus of this paper is on the optimization of operation temperature when Gate Commutated Thyristors (GCTs) are applied in HCB applications. The operation conditions...
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