The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, we report on the observation of the QHE in gated epitaxial graphene films on SiC (0001), along with pronounced Shubnikov-de Haas (SdH) oscillations in magnetotransport. The last QH plateau is especially pronounced, even at temperatures as high as 70 K, reaching the temperature limit of the present experimental setup.
We have fabricated and characterized the field effect transistors having epitaxial-graphene channel grown on Si substrates. Epitaxial graphene is usually formed on SiC substrates by ultrahigh-vacuum (UHV) annealing. We used an approach to grow 3C-SiC(111) on Si substrates and subsequently to anneal it in UHV to make few layers of graphene on the sample surface. Backgate transistors using the SiC layer...
Epitaxial graphene can be grown by catalytic decomposition of hydrocarbons on Ir(111). Scanning tunneling microscopy reveals that C/Ir(111) has a high degree of structural quality (??m-sized domains, coherent overgrowth of surface defects). The system is characterized by weak metal-graphene bonding and shows a pronounced moire?? superstructure. The growth process can be tuned to yield different morphologies...
Nondegenerate ultrafast mid-infrared pump-probe spectroscopy is used to study multilayer epitaxial graphene. By tuning the probe wavelength, we can determine the doping profile of the layers.
Graphene is a possible candidate for advanced channel materials in future field effect transistors. This presentation gives a brief overview about recent experimental results in the field of graphene transistors for future electronic applications.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.