The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The medium voltage (MV) high-speed drives are required for traction, wind energy, marine, aerospace, oil, and gas compressors applications. The MV converter must be able to switch at higher switching frequencies (> 5 kHz) to generate higher fundamental frequency AC input voltages for the motor (≥ 500 Hz) and thereby achieving high speed at the motor output (≥ 15000 rpm). This paper presents the...
The introduction in the semiconductor market of the SiC technology enables power designers the development of power converters with higher power density (W/m3) in comparison with the traditional converters based on Si power semiconductors. This work presents the redesign of a DC-DC converter, used in railway traction applications with full-SiC modules. The low current rating of the actual full-SiC...
Safety Instrumented Systems (SIS) act as important safety barriers in industrial systems for preventing hazardous accidents. It is therefore significant to study the reliability issues of SIS. As a matter of fact, SIS have common behaviors such as periodic test policies to discover dangerous undetected failures. Modeling patterns capitalize the experience from modeling SIS. By reusing modeling patterns,...
The recently emerging SiC devices provide a promising solution to improve power converter efficiency and power density. However the expensive cost limited the widely use of SiC device. The parallel connection of SiC MOSFET and Si IGBT is introduced in this paper to utilize the advantage of this two different kinds of devices and proposed corresponding switching strategies. The switching loss and current...
This article proposes a power converter solution for 1.5 kV DC photovoltaic applications and benchmark the benefits of commercially available SiC MOSFETS for the system power efficiency. The circuit solution is based on a full power factor three-level active neutral-point-clamped converter featuring reduced numbers of high-frequency switched semiconductors. A combination of Si IGBT and SiC MOSFET...
Conventional text-based information communications may cause misunderstanding particularly in case of a dialog between different generations, gender or cultural background. Intelligent communications may solve these problems by the aid of “happiness sensor” and retrieving additional information of personal record of the counterparts. Breakthroughs necessary to realize the intelligent communications...
In this paper, the design of a multi-layer laminated busbar for a Si and SiC hybrid switch based 100 kW three-level T-type, single-phase, power electronics building block is presented. Due to the absence of three-level T-type topology in WBG based power modules at this power level, the PEBB design along with the busbar design is novel. This busbar facilitates the interconnection between the DC-link...
Code smells are a metaphor to describe symptoms in the code that may provoke maintainability problems. Code smell detection and remove have a closer relationship to refactoring which has been a well-known and disseminated practice for improving software maintenance and reuse. In 2013 a study for knowing about the position and knowledge of developers was conducted from Norway. This study covered developers...
This paper presents an experimental switching behaviour comparison of GaN HEMT and SiC MOSFET against their Si competitors, the Si SJ MOSFET and high speed Si IGBT, in the 650 V class. The devices are first compared using their respective datasheets. The test circuit is introduced and hard switching tests under inductive load are performed to reveal the switching performance of the devices. The differences...
This paper presents Direct Power Control (DPC) based on instantaneous power theory is presented. The simulation of a grid connected five level inverter via an inductive filter with a new direct power strategy is used. However, this control method is similar to the classic DPC method, in which used triangles instead of the sectors. Furthermore, the regulation of DC link without interfering the hysteresis...
This paper covers characterization and gate drive design for high voltage, gallium nitride (GaN), high electron-mobility transistors (HEMT) in a cascode structure. Parameters of high voltage cascode GaN HEMT devices are described and compared to state-of-the-art Si MOSFET devices. Challenges in designing high frequency GaN based power converter and common design practices are described. Effects of...
Following the recent advances in the production of 3.3 kV and 10 kV SiC power MOSFETs, Wolfspeed launched an effort to develop a new generation 6.5 kV SiC power MOSFET to fill the medium-to high-voltage fast switching device void in applications such as rail traction and mediumvoltage motor drives. The characteristics of the new generation 6.5 kV SiC power MOSFET rated at a drain current of 30 A,...
The U.S. Department of Energy's Advanced Research Project Agency for Energy (ARPA-E) was established in 2009 to fund creative, out-of-the-box, transformational energy technologies that are too early for private-sector investment, at make-or break points in their technology development cycle. Development of advanced power electronics with unprecedented functionality, efficiency, reliability, and reduced...
Three GaN-based buck switching power stage architectures are implemented using discrete GaN High Electron Mobility (HEMTs) devices and compared with respect to efficiency, switching speed (2 to 10MHz), and power conversion ratio for medium-power applications. The three presented power stage architectures are: a single-stage buck, a multi-phase buck with 2 phases, and a stacked interleaved configuration...
This paper presents the project procedure to develop a Half-Bridge (HB) Non-Isolated DC-DC converter applying a Normally-On GaN-based switch. Normally-on devices (D-mode) present the benefit of lower costs in terms of production if compared with E-mode devices, which gives an economic motivation to study and develop power electronics converters applying this technology. The devices under test (DUTs)...
The superior electrical and thermal properties of silicon carbide (SiC), when compared to silicon (Si), has lead to it being used in power converter designs that require high efficiency and low volume. However while choosing the semi-conductor material for these high performance designs is relatively simple, the specific type of SiC device (e.g. JFET, MOSFET or BJT) is not so straight-forward. This...
Power switch devices which base on wide band-gap (WBG) semiconductor, such as silicon carbide metal-oxide-semiconductor-field-effect-transistor (SiC MOSFET) and gallium nitride high-electron-mobility transistor (GaN-HEMT) perform superior performance as compared with silicon (Si) MOSFET in high switching frequency, high blocking voltage, and high temperature operation. In this paper, a series of characteristic...
Wide-bandgap (WBG) devices are believed as the alternate of silicon switches for high-efficiency and high-power-density power electronics converters. While two major challenges of WBG devices remain as high cost (∼5 times of Si) and less options (the maximum power rating for GaN is only 650V/60A), paralleling GaN with Si could be the potential solution to solve pains above. In this paper, two SMT...
In this paper, key aspects of silicon-carbide (SiC)-based automotive traction drives are reviewed. Firstly, the required supporting factors to achieve optimal operating conditions and best performance are described. Major component sizing methodologies and constraints are included. Expectations on gate threshold voltage, trans-conductance, and transient oscillation are discussed. Tolerance against...
The U.S. Army Research Laboratory (ARL) and Wolfspeed developed silicon carbide (SiC) vertical MOSFETs for linear-mode operation. The motivation is to determine whether SiC's material properties enable SiC MOSFETs to withstand higher pulse-current density and energy dissipation than is achievable with commercial silicon linear-mode MOSFETs. The SiC device is a 3.3 mm × 3.3 mm chip with a thick gate...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.