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Two types of ReRAM are investigated. The first is a CB-ReRAM (conducting bridge ReRAM) that uses metallic ions to form the bridge. This type of device is known to be unstable because the conducting bridge tends to self-destruct. By adding a buffer layer between the electrode and the electrolyte, the retention of the Cu-based CB-ReRAM is greatly improved while the superior electrical performance is...
The SiC power devices can operate at high junction temperatures (Tj) as high as beyond 300°C and at high switching frequencies. The application of SiC devices in power electronics can improve the efficiency and can increase the power density of the converters. To realize the outstanding ability of the SiC devices, the high temperature packaging technology is crucial. The ceramic/Cu/Ni(P) is the standard...
In summary, a novel RRAM with the structure of Cu/SixOyNz/W was first fabricated and its characteristics are thoroughly investigated. The new device exhibited low switching voltages and low reset currents, demonstrating its potential for low-power applications. Repeatable unipolar resistive switching characteristics in terms of high off/on resistance ratio and good retention capability were observed...
Solid-electrolyte crossbar switch (namely NanoBridge) with low programming current of 420μA and highly reliable ON state against pulsed-alternating current (AC) stress is demonstrated under practical operating conditions of a programmable logic device (PLD). The ON-state duration under a pulsed-AC stress is achieved >10 years at 150°C. The high reliability under AC originates from the fact that...
We report a ZrO2-based resistive memory composed of a thin Cu doped ZrO2 layer sandwiched between Pt bottom and Cu top electrode. The Cu/ZrO2:Cu/Pt shows excellent nonpolar resistive switching behaviors, such as free-electroforming, high ON/OFF resistance ratio (106), fast Set/Reset speed (50 ns/100 ns), and reliable data retention (>10 years). The temperature-dependent switching characteristics...
Today's main stream NVM technologies require operational conditions that are incompatible with modern low voltage logic CMOS designs. This characteristic results in complex integration issues as well as costly process and array concept especially for embedded NVM use models. Conductive bridging memory cell (CBRAM) technology is an attractive emerging memory technology that offers simple integration...
Novel bi-layered solid electrolytic based resistive switching memory device using Al/Cu/Ge0.2Se0.8/Ta2O5/W structure has been investigated for the first time. The tight distribution of resistance states and threshold voltage are achieved as compared to that of single layer Ge0.2Se0.8 solid-electrolyte. Stable endurance of ≫3.5×105 cycles and excellent retention characteristics with a low compliance...
Low current/voltage (1 nA/1.3V) operation of resistive switching memory device using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte has been investigated. This resistive memory device have a large resistance ratio of > 10 at 1 nA current compliance, good endurance of ~105 cycles, and good data retention with a current of 1 nA up to 2×103 seconds. The low resistance state decreases with increasing...
We report on the realisation of bipolar resistive electrical switching in memories based on inorganic solid ionic conductors, where the switching is localized in a dedicated switching layer. The switching mechanism is the electrochemical formation of a conductive metallic filament that bridges an insulating switching layer (ON state) and its reversible dissolution (OFF state). These memories have...
This paper presents the development of modular dual-half-bridge (MDHB) bidirectional dc-dc converter as the dc-dc stage of 10 kVA single phase solid state transformer (SST) for future renewable electric energy distribution and intelligent power management systems. The dc-dc converter, connected to 12 kV DC bus generated by an ac-dc rectifier interfacing with 7.2 kV electric utility grid, is to provide...
A fully logic-compatible, nonvolatile crossbar switch using a novel dual-layer TiOx/TaSiOy solid-electrolyte, ??NanoBridge??, has been developed for the first time, which is scalable to 50 nm and beyond and keeps the extremely low ON-resistance of <100 ??. A key breakthrough is the dual-layer solid-electrolyte, in which TiOx works as an oxygen absorber as well as a superior ionic conductor, thus...
We propose a new type of magneto-optical (MO) spatial light-modulation device, driven by spin-polarized current flow, i.e. spin transfer switching (STS-SLM). Its basic operation and characteristics were experimentally confirmed. The proposed SLM device has a spatial resolution as small as several hundred nanometers, and an ultra-high drive speed of several tens of nanoseconds, and its basic operation...
In this letter, we fabricate Cu/ZrO2:Au/Pt and Cu/ZrO2:Ti/Pt devices via implanting Au or Ti ions. We systematic investigate the resistance switching properties of the two types of metal doped ZrO2-based resistance random access memory. Compared with the undoped (Cu/ZrO2/Pt) device, the metal doped devices show free-electroforming process, narrow distribution of the switching parameters and high device...
Bipolar resistive switching memory device using high-kappa Ta2O5 solid electrolyte in a Cu/Ta2O5/W structure with the device sizes from 0.2-8 mum was investigated. This resistive memory device has a high threshold voltage of 0.75 V, high resistance ratio (RHigh/RLow) of 3times103, good endurance of > 103, and excellent retention at 150degC. The memory device with a low current operation of 5 pA...
The long retention, more than 10 years at 85degC, and excellent thermal reliability memory of TiN-CuxO-Cu (with TiN cap layer as top electrode) is reported. TiN cap layer results in more stable reset from low resistance state (LRS) to high resistance state (HRS) under positive pulse and SET under negative pulse, which is beneficial for providing large programming current or voltage on the resistive...
Bipolar resistive switching memory device with a low power operation (200 muA/1.3 V) in a W/Ge0.4Se0.6/Cu/Al structure has been investigated. A stronger Cu chain formation can be observed by monitoring both the erase voltage and current. The low resistance state (RLow) decreases with increasing the programming current from InA to 500 muA, which can be useful for multi-level of data storage. This resistive...
Low current/voltage (~10 nA/1.0V) resistive switching memory device in a Cu/Ta2O5/W structure has been proposed. The low resistance state (RLow) of the memory device decreases with increasing the programming current from 10 nA to 1 mA, which can be useful for multi-level of data storage. This resistive memory devices have stable threshold voltage, good resistance ratio (RHigh/RLow) of 5.3times107,...
Tungsten trioxide (WO3) thin films with Pt and Cu electrodes are characterized regarding the suitability for nonvolatile memory applications. Cells down to 70 ?? 70 nm2 are fabricated by a combination of e-beam and nanoimprint lithography. The electrical measurements reveal good properties with switching currents of only 500 nA, fast SET and RESET switching down to 5 ns and retention for 104 s with...
Resistance switching is an interesting alternative to conventional charge storage devices for future high density storage media. Cu/CuTCNQ(300 nm)/Al memory structures with pad size ranging from 1000 down to 150 ??m were carefully studied to apprehend their switching behavior. Electrical testing revealed bipolar resistive switching and a shrink of the memory window as the pad-size decreased. Current...
Resistive random access memory (ReRAM) has drawn lots of attention for nonvolatile memories. Among various resistive switching materials and phenomena, solid state electrolytes, such as copper sulfide and Ag-Ge-Se devices, show interesting properties for memory or logic application. But too small turn on voltage (Vset is below 0.3 V) could be positive in point of power consumption but should be improved...
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