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The SiC power devices can operate at high junction temperatures (Tj) as high as beyond 300°C and at high switching frequencies. The application of SiC devices in power electronics can improve the efficiency and can increase the power density of the converters. To realize the outstanding ability of the SiC devices, the high temperature packaging technology is crucial. The ceramic/Cu/Ni(P) is the standard...
This paper presents a thermal analysis and designs a water-cooled heat sink for an Si-IEGT and SiC-PiN diode module rated at 4.5-kV and 100 A. The operation temperature and thermal conductivity of the SiC-PiN diode are higher than that of the Si-IEGT. Therefore a design procedure for the water-cooled heat sink should be considered characteristics of each device. This paper shows a thermal analysis...
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