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Power Semiconductor devices used for high voltage, high current applications dissipate lot of power thereby rapidly increasing their junction temperature to levels beyond which no SPICE (Simulation Program with Integrated Circuit Emphasis) models exist. In this paper, the design of an integrated four channel squib driver SOC (System on Chip) with four High Side (HS) drivers and four Low Side (LS)...
This paper presents a high temperature integrated amplifier implemented in bipolar 4H-SiC technology. A 40 dB negative feedback voltage amplifier has been designed using the structured design method to overcome the temperature variation of device parameters. The amplifier performance degrades as the temperature increases from room temperature up to 500°C. The measured gain is reduced from 39 dB at...
A methodology is presented that allows quantitative prediction of the impact of WLCSP induced mechanical stress on high precision mixed-signal ICs. The simulation flow was tuned using high-resolution experimental variability data measured on dedicated test chips. The methodology is exemplified with an on-chip oscillator circuit suffering from WLCSP stress induced variability.
An improved SPICE model is presented in this work, including three coupled modules, the electrical module, thermal module and the phase transition dynamic module. Considering the heterogeneous temperature distribution, a temperature distribution model and a distributed resistor network model based on the semispherical hypothesis of the active area are achieved. The model is submitted by Verilog-A...
In highly exploited and integrated mechatronic systems the thermal design and management defines the maximum load case. The trend to move to higher power densities needs precise and reliable thermal models of electrical machines to determine the limits of new and thermally demanding use cases and/or gives design guidelines for future generations of the product.
New SPICE-like simulation models for a power MOSFET containing a dynamic link between electrical and thermal component descriptions were described. The designed electro-thermal MOSFET model consists of several parts which represent different transistor behavior at different conditions as reverse bias, avalanche breakdown, thermal burning and others. Modified thermal equivalent circuit diagrams were...
This article describes the design of a sensor interface circuit for the amplification of voltages and currents. The created PCB was tested at high temperatures and under gamma irradiation. Two different operational amplifiers were compared.
All types of passive components present variations of most parameters as function of the operating temperature. Depending on the component type and thermal management, in a specific application, these parameter variations can sometimes exceed 20% over the entire temperature range, having an important effect on the overall performance of the circuit. These variations in parameter values, although expected,...
A comprehensive nonlinear model of GaAs resistor is developed based on DC, pulse and power measurements. The model accounts for electrical and thermal feathers such as velocity saturation, self-heating and breakdown effects. The resistor nonlinearity is mainly due to the velocity saturation, and enhanced by self-heating effect. The model provides accurate performances in DC, transient and harmonic...
This paper presents the methodology to obtain the snapback curves and second breakdown point of an ESD stressed device through TCAD simulation. This method allows an excellent ESD simulation convergence and then good ESD prediction with a significantly reduced computation time. One 0.5um CMOS technology has been simulated for experimental support.
Silicon carbide MESFETs are very attractive devices for high frequency applications, and communications. Progresses in the manufacturing of high quality SiC substrates open the possibility to new circuit applications. SiC unipolar transistors, such as JFETs and MESFETs have also a promising potential for digital integrated circuits operating at high temperature (HT) and/or in harsh environments. An...
A recently introduced InGaP/GaAs BiFET process allows the integration of a JFET device with a standard HBT process. This JFET device, also called a voltage variable resistor (VVR), can be utilized in bias control circuits on the same die as HBT power amplifiers. An innovative modeling solution was developed to simulate temperature and surface state mechanisms related to device performance. For this...
This paper presents design considerations and measurement results for low voltage bandgap reference circuits in a recent multi-gate CMOS technology. Gated p-i-n diodes are used as basic elements, a corresponding model covering temperature dependence is derived. The impact of non-idealities and process variations on circuit performance is analyzed, design guidelines are derived. Low gds of current...
Bisected thermodynamic sensor in temperature shift balance circuit as the power AC/DC transmitter is described. This paper deals with new thick film sensor used for thermodynamic direct power AC/DC transmission in industrial systems. In previous papers the basic principle of thermodynamic sensor was introduced and its construction on alumina ceramic substrate with commercial thick film pastes was...
This article proposes a topology of current-mode improved Wheatstone bridge based on dual-output current differencing transconductance amplifier (DO-CDTA). The features of the proposed configuration are that: magnitude of output signal can be controlled via the input bias currents; the proposed circuit is low temperature sensitive, the circuit description is very simple. The circuit performances are...
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