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The interfacial layers of high dielectric constant (high - k) nanolaminate films are here explored. Problems concerning ALD nanolaminate layers deals mainly with lack of accurate methods to determine in depth profile of few nm thick stacks. Angle Dependent XPS (ADXPS) is proposed as method suitable in layer profiling. Studied stacks containing industrial grown ZrO2/HfO2 films( d~3 nm) were processed...
We report the deposition and characterization of thin ZnO films on 〈100〉 silicon substrates employing Atomic layer deposition (ALD). This technique is considered to have a great potential for nano-scale applications due to its excellent conformality, total surface coverage, uniformity, accurate thickness control, its ability to deposit high k-dielectrics, metals, nucleation layers and barrier materials,...
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