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The authors have fabricated high-performance CF4 plasma treated poly-Si TFTs with a high-k PrTiO3 gate dielectric. The electrical characteristics such as the threshold voltage, subthreshold swing, ION/IOFF current ratio, and carrier mobility are effectively improved. In addition, the CF4 plasma treatment improves the HC and PBTI immunity due to the formation of Si-F bonds. The CF4 plasma treatment...
In this letter, fluorine-ion (F+) implantation was employed to improve the electrical performance of metal-induced lateral-crystallization (MILC) polycrystalline-silicon thin-film transistors (poly-Si TFTs). It was found that fluorine ions minimize effectively the trap-state density, leading to superior electrical characteristics such as high field-effect mobility, low threshold voltage, low subthreshold...
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