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This paper reports the performance and electrical characterization results of high voltage Polarization Superjunction (PSJ) GaN Schottky Barrier Diodes (SBD) on semi-insulating 6H-SiC substrate for the first time. Fabricated PSJ SBDs with drift length of 25 μm show low on-set voltage of ~ 0.4V, high reverse blocking voltage (VBR) of ~ 2400V, specific on-state resistance (RON.A) of ~ 14 mΩ.cm2 and...
In this work, a physical Schottky barrier diode model is presented. The model is based on physical parameters such as anode area, Ohmic contact area, doping profile from epitaxial (EPI) and substrate (SUB) layers, layer thicknesses, barrier height, specific contact resistance, and device temperature. The effects of barrier height lowering, nonlinear resistance from the EPI layer, and hot electron...
Reduction of ON resistance and OFF capacitance of GaN microwave rectifying diode is realized by applying T-shaped anode wiring together with increase of donor concentration in the active layer. The time constant defined by the product of ON resistance and OFF capacitance is reduced from 2.72ps to 0.79ps while the breakdown voltage decreased from 108V to 50V.
GaN-based heterostructure lateral Schottky barrier diodes (SBDs) grown on -SiC substrate are investigated in this letter. These SBDs own very low onset voltage , high reverse blocking , very low capacitive charge of 0.213 nC/A, and a very fast recovery time of 10 ps. These unique qualities are achieved by combining lateral topology, GaN:C...
The design consideration and fabrication of a planar GaAs Schottky barrier diode with cutoff frequency up to 650 GHz is presented in this paper. The theory and design principle was given at the beginning. Then, the key material and geometrical parameters are analyzed using electron behavior analysis and the finite element method. Considering the analyzed results as well as fabrication cost and complexity,...
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