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We demonstrate ultralow leakage current AlGaN/GaN Schottky-barrier diodes (SBDs) based on a 3-D anode contact. In contrast to conventional AlGaN/GaN SBDs, this new device forms a Schottky contact directly to the 2-D electron gas (2-DEG) at the sidewalls of the 3-D anode structure to improve its turn-on characteristics. In addition, this device integrates an insulated trigate MOS structure to reduce...
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