The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, an experimental investigation on high temperature carrier mobility in MOSFETs is carried out with the aim of improving our understanding of carrier transport. The effective mobility is sensitive to the values of the effective channel length (Leff) and source/drain resistance (RSD). Therefore the extraction of Leff and RSD was performed in extracting carrier mobility at high temperature.
The modified Schottky barrier (MSB) MOSFET with low-resistance metal source/drain and good short-channel effect immunity is one of the promising nanoscale device structures. In this letter, a modified external load resistance method was proposed to extract the bias-dependent source injection resistance of the MSB MOSFET for the first time. The effect of the thermal budget of the MSB process on the...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.