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Redox-based resistive switching devices can be switched between a high resistance state and a low resistance state in a reversible manner. An important requirement is the stable operation between these two states for a high amount of switching cycles. In this work the switching dynamics of these devices are investigated by means of device simulation. Hereby, we discuss the conditions for which a fading...
Size scaling CMOS transistors are known to improve cost, speed, and power per chip that results in high performance IC. However, too small transistor size can degrade transistor performance thus become limitation to CMOS scaling. One way to overcome this limitation is by incorporating CMOS with memristor; a device that offers small size, low power, nonvolatile characteristic with switching ability...
Memristor technology is receiving an increased attention as a potential solution to meet the scaling demands in integrated circuit design. Memristor provides advantages like high-density, low-power, non-volatility and good scalability. In this paper, an 8-bit iterative full adder design is proposed that uses space-time based circuit notation. It uses stateful logic with memristive nanowire crossbar...
As the internet-of-things (IoT) paradigm emerges, digital system designers are pressed with ever challenging design requirements necessitating smaller, more energy efficient systems. Such requirements for lightweight IoT devices apply first and foremost to the primary functionality of the devices themselves. However, as IoT devices and systems become more prevelant in society, designers also must...
This article describes a method of creating crossbar structures based on copper chloride and results of research such structures. It is shown that the obtained elements have a memristor properties. The used compound can provide better operation speed of elements in comparison with the materials studied earlier. The switching voltages of the investigated structures were 0.2 V and −0.25 V. Measured...
Memristor crossbars are capable of implementing learning algorithms in a much more energy and area efficient manner compared to traditional systems. However, the programmable nature of memristor crossbars must first be explored on a smaller scale to see which memristor device structures are most suitable for applications in reconfigurable computing. In this paper, we demonstrate the programmability...
Versatile resistance switching effects in niobium oxide based MIM structures have been reported. Besides the filamentary resistance and threshold switching effects, which occur after an initial electroforming process, a forming free resistance switching operation was found in a double layer structure of Nb2O5 and Al2O3. In our work we report on the co-existence of a capacitance change accompanying...
By combining the functionalities of Boolean gates and non-volatile memory, stateful logic may enable significant savings in time and energy for computational processes where available power source is limited. In this talk, fundamental principles of stateful logic will be described first, and circuit level implementation of it using recently explored bi-functional memristor (coexistence of unipolar...
The maximum exploitation of the favorable properties and the analog nature of memristor technology in future nonvolatile resistive memories, requires accurate multi-level programming. In this direction, we explore the voltage divider (VD) approach for highly controllable multi-state SET memristor tuning. We present the theoretical basis of operation, the main advantages and weaknesses. We finally...
This paper explores the dynamic behavior of dual flux coupled memristor circuits in order to further ascertain fundamental theory of memristor circuits. Different cases of flux coupling are mathematically modelled where two memristors are connected in both series and parallel, with consideration given to the polarity of each device. The dynamic behavior is characterized based on the constitutive relations,...
Resistive switching devices have a high potential for nonvolatile memories and circuit applications. This paper gives a review of the different switching modes in niobium oxide. Abrupt memory switching, threshold switching with or without memory switching and analog switching can be obtained by controlling the stoichiometry of the layer stack either with the use of reactive electrodes, by reactive...
Neuromorphic circuits have recently emerged as promising candidates for future computing paradigms. Min-Max circuits are indispensable building blocks in many neuromorphic systems, fuzzy systems and artificial neural networks. An important challenge in the design of state-of-the-art min-max circuits is their area occupancy. Memristor-based min-max circuits have been sought as powerful candidates in...
This article discusses the issues relating to the switching and memory processes in thin films structures based on Me-MeOx-Me systems, also referred to as memristor. The memristor creation allows associative computing architecture hardware realized by synapse from nano-materials copying and the neuromorphic microchips and computing devices. As a result, programmable computers history completion and...
Memristor's on/off resistance can naturally store binary bits for non-volatile memories. In this work, we found that memristor's another peculiar feature that the switching takes place with a time delay (we name it "the delayed switching") can be used to selectively address any desired memory cell in a crossbar array. The analysis shows this is a must-be in a memristor with a piecewise-linear...
Emerging solid state memory devices based on different materials and volatility has been widely acknowledged like NVRAMs (or Memristor). Evolution of new solid state ionic conductors and in particular (Memristor) brought impetus to the creation of new domain of larger storage capabilities for the future electronic systems. The achievements of these emerging technologies are kind of encouraging when...
Redox-based resistive switching devices are an emerging class of non-volatile ultra-scalable memory and logic devices. These devices offer complex internal device physics leading to rich dynamical behavior. Memristive device models are intended to reproduce the underlying redox-based resistive switching device behavior accurately to enable proper circuit simulations. A specific feature of resistively...
Many existing memristor models have a direct relationship between resistance change and the voltage pulse applied. However, this results in a memristor model that can be tuned nearly to a floating point value if a small enough voltage pulse is applied. This paper discusses how noise can be added to the dynamic resistive switching component of a memristor model in SPICE. The proposed memristor model...
The effort of investigating memristor material continues. This paper demonstrates the latest results of such effort by our group. These include memristor device design and measurement based on stacked lithium niobate and aluminum oxide. I-V sweeping results show good switch memristive characteristic. Other preliminary results in this paper include temperature dependency study, pulse voltage write/read...
Three memristive devices were fabricated and investigated for sensing oxygen in ambient air. The device design was as follows: Deposition of copper (Cu) bottom electrodes, copper oxide (CuxO) switching layers, and W top electrodes in a crossbar array structure. The CuxO layer was deposited via reactive sputtering of a Cu target with Ar/O2 mixture. A portion of this layer was left exposed for sensing...
This project presents the fabrication and characterization of a memristor and its implementation in digital logic. The memristor was fabricated using TiO2 thin film using sol-gel spin coating technique sandwiched in between a Pt top electrode and a conductive ITO substrate to form the metal-insulator-metal (MIM) configuration. It was found that the fabricated device showed the pinch-hysteresis loop...
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