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Wide-bandgap (WBG) power devices such as SiC devices can operate at higher switching speed, higher voltage and higher temperature. While the opportunities in performance improvement with WBG devices are clear, there are significant design challenges. For example, the fast switching speed and high dv/dt can cause increased level of electro-magnetic interference (EMI), current overshoot and cross-talk...
Gallium Nitride (GaN) based power devices have been demonstrated to deliver higher energy efficiency than their Silicon (Si) counterparts for 200–1.2kV rated applications. The benefits of GaN technologies and their market potential will be highlighted in this paper together with the main challenges that GaN-based power systems need to overcome to reach their full potential and finally enter the market...
Although the hybrid switch consisting of high power Si IGBT and low power SiC MOSFET achieves reduction of losses and cost, there is a severe concern of its short-circuit capability due to its internal SiC MOSFET with small die size. Experimental study shows that the short-circuit capability of hybrid switch is limited by that of SiC MOSFET. The physical mechanism of short-circuit capability of SiC...
Bi-directional switches, also called four quadrant switches (FQS), are the basic building blocks in many power converter circuits, such as cyclo-converters, matrix converters etc. Conventional approaches to realize bi-directional switch involves combination of unidirectional controllable blocking device (IGBT or MOSFET) and diode. In this approach, current flows through multiple devices for any direction...
In this paper, a comparative evaluation between a commercial 3.3 kV/400 A Si-IGBT and a 3.3 kV/400 A SiC MOSFET power module in half-bridge configuration is presented. With a constant current of 250 A, a lower forward voltage (VDS) drop of 1.6 V is obtained for SiC MOSFET at 300 K compared to Si IGBT. At 400 A, the difference is reduced to 1.3 V. SiC MOSFET offers an on-state resistance of 8.7 mΩ,...
In this paper, a resonant switched-capacitor dc-dc converter is proposed for data center application. The proposed converter possesses features such as high efficiency, high power density and light-weight. Zero current switching (ZCS) can be achieved with the resonant operation, which allows the converter operating under high efficiency. Proper switching device selection and in-depth power loss analysis...
This paper presents a hybrid multilevel inverter with DC bypass. Mixed modulation method is proposed to balance dc voltage, and enables Si devices & wide bandgap devices integration to reduce power loss and achieve high power density. Simulation results are firstly provided to verify the validity of the proposed approach.
This paper proposes a hypothetic silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) power module for the medium voltage (MV) variable frequency drive (VFD). A peer-to-peer comparison between commercial silicon (Si) insulated-gate bipolar transistor (IGBT) and the proposed SiC MOSFET module results in some promising results to support the introduction of SiC power modules...
The medium voltage (MV) high-speed drives are required for traction, wind energy, marine, aerospace, oil, and gas compressors applications. The MV converter must be able to switch at higher switching frequencies (> 5 kHz) to generate higher fundamental frequency AC input voltages for the motor (≥ 500 Hz) and thereby achieving high speed at the motor output (≥ 15000 rpm). This paper presents the...
The introduction in the semiconductor market of the SiC technology enables power designers the development of power converters with higher power density (W/m3) in comparison with the traditional converters based on Si power semiconductors. This work presents the redesign of a DC-DC converter, used in railway traction applications with full-SiC modules. The low current rating of the actual full-SiC...
Safety Instrumented Systems (SIS) act as important safety barriers in industrial systems for preventing hazardous accidents. It is therefore significant to study the reliability issues of SIS. As a matter of fact, SIS have common behaviors such as periodic test policies to discover dangerous undetected failures. Modeling patterns capitalize the experience from modeling SIS. By reusing modeling patterns,...
The recently emerging SiC devices provide a promising solution to improve power converter efficiency and power density. However the expensive cost limited the widely use of SiC device. The parallel connection of SiC MOSFET and Si IGBT is introduced in this paper to utilize the advantage of this two different kinds of devices and proposed corresponding switching strategies. The switching loss and current...
This article proposes a power converter solution for 1.5 kV DC photovoltaic applications and benchmark the benefits of commercially available SiC MOSFETS for the system power efficiency. The circuit solution is based on a full power factor three-level active neutral-point-clamped converter featuring reduced numbers of high-frequency switched semiconductors. A combination of Si IGBT and SiC MOSFET...
Conventional text-based information communications may cause misunderstanding particularly in case of a dialog between different generations, gender or cultural background. Intelligent communications may solve these problems by the aid of “happiness sensor” and retrieving additional information of personal record of the counterparts. Breakthroughs necessary to realize the intelligent communications...
In this paper, the design of a multi-layer laminated busbar for a Si and SiC hybrid switch based 100 kW three-level T-type, single-phase, power electronics building block is presented. Due to the absence of three-level T-type topology in WBG based power modules at this power level, the PEBB design along with the busbar design is novel. This busbar facilitates the interconnection between the DC-link...
Code smells are a metaphor to describe symptoms in the code that may provoke maintainability problems. Code smell detection and remove have a closer relationship to refactoring which has been a well-known and disseminated practice for improving software maintenance and reuse. In 2013 a study for knowing about the position and knowledge of developers was conducted from Norway. This study covered developers...
This paper presents an experimental switching behaviour comparison of GaN HEMT and SiC MOSFET against their Si competitors, the Si SJ MOSFET and high speed Si IGBT, in the 650 V class. The devices are first compared using their respective datasheets. The test circuit is introduced and hard switching tests under inductive load are performed to reveal the switching performance of the devices. The differences...
This paper presents Direct Power Control (DPC) based on instantaneous power theory is presented. The simulation of a grid connected five level inverter via an inductive filter with a new direct power strategy is used. However, this control method is similar to the classic DPC method, in which used triangles instead of the sectors. Furthermore, the regulation of DC link without interfering the hysteresis...
This paper covers characterization and gate drive design for high voltage, gallium nitride (GaN), high electron-mobility transistors (HEMT) in a cascode structure. Parameters of high voltage cascode GaN HEMT devices are described and compared to state-of-the-art Si MOSFET devices. Challenges in designing high frequency GaN based power converter and common design practices are described. Effects of...
Following the recent advances in the production of 3.3 kV and 10 kV SiC power MOSFETs, Wolfspeed launched an effort to develop a new generation 6.5 kV SiC power MOSFET to fill the medium-to high-voltage fast switching device void in applications such as rail traction and mediumvoltage motor drives. The characteristics of the new generation 6.5 kV SiC power MOSFET rated at a drain current of 30 A,...
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