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An overview on the recent progress of Si insulated gate bipolar transistors (IGBTs) and SiC MOSFETs as key components in today's power electronic system is given. The state-of-the-art device concepts are explained as well as an outlook about ongoing and foreseeable development steps are shown.
Wide-bandgap (WBG) power devices such as SiC devices can operate at higher switching speed, higher voltage and higher temperature. While the opportunities in performance improvement with WBG devices are clear, there are significant design challenges. For example, the fast switching speed and high dv/dt can cause increased level of electro-magnetic interference (EMI), current overshoot and cross-talk...
Recent advances and new trends in high voltage SiC based MOSFETs are analyzed. The main focus is done on design optimization strategies for reducing the on-state resistance. Gate oxide treatments for improving the interface quality resulting in a lower channel resistance are reviewed as well as solutions for lowering the JFET and bulk resistance components. The 3rd quadrant operation, short-circuit...
Although the hybrid switch consisting of high power Si IGBT and low power SiC MOSFET achieves reduction of losses and cost, there is a severe concern of its short-circuit capability due to its internal SiC MOSFET with small die size. Experimental study shows that the short-circuit capability of hybrid switch is limited by that of SiC MOSFET. The physical mechanism of short-circuit capability of SiC...
Bi-directional switches, also called four quadrant switches (FQS), are the basic building blocks in many power converter circuits, such as cyclo-converters, matrix converters etc. Conventional approaches to realize bi-directional switch involves combination of unidirectional controllable blocking device (IGBT or MOSFET) and diode. In this approach, current flows through multiple devices for any direction...
Gallium nitride (GaN) devices, as their better performance in high temperature, high efficiency and high power density converters, have been recognized as the most promising successor for Si MOSFET in the future. In order to take advantages of the superiority of depletion-mode GaN devices, a low voltage Si MOSFET is in series to drive the depletion-mode GaN device, which is well known as cascode structure...
This paper presents a high efficiency SiC power converter in pulsed power applications. SiC Power MOSFETs have 7∼10 times lower switching loss than Silicon counterparts. However, because of the large depletion capacitance, the SiC device switching loss will be higher than silicon device at zero current. Therefore, loss reduction method is proposed to further improve SiC gradient driver efficiency...
With their intrinsic superiorities such as high breakdown electric field and high thermal conductivity, SiC MOSFETs are replacing Si IGBTs in power electronics applications. However, at higher voltages SiC MOSFETs are at early stage of development and are not commercialized yet. For the first time, this paper presents thorough static and dynamic performance characterization of 3.3 kV and 30 A discrete...
In this paper, a comparative evaluation between a commercial 3.3 kV/400 A Si-IGBT and a 3.3 kV/400 A SiC MOSFET power module in half-bridge configuration is presented. With a constant current of 250 A, a lower forward voltage (VDS) drop of 1.6 V is obtained for SiC MOSFET at 300 K compared to Si IGBT. At 400 A, the difference is reduced to 1.3 V. SiC MOSFET offers an on-state resistance of 8.7 mΩ,...
In this paper, a resonant switched-capacitor dc-dc converter is proposed for data center application. The proposed converter possesses features such as high efficiency, high power density and light-weight. Zero current switching (ZCS) can be achieved with the resonant operation, which allows the converter operating under high efficiency. Proper switching device selection and in-depth power loss analysis...
High-density packaging of fast-switching power semiconductors typically requires low thermal resistance and parasitic inductance. High-density packaging of high-voltage semiconductors, such as 10 kV SiC MOSFETs, has the added challenge of maintaining low electric field concentration in order to prevent premature dielectric breakdown. This work proposes a wire-bond-less, sandwich structure with embedded...
This paper proposes a hypothetic silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) power module for the medium voltage (MV) variable frequency drive (VFD). A peer-to-peer comparison between commercial silicon (Si) insulated-gate bipolar transistor (IGBT) and the proposed SiC MOSFET module results in some promising results to support the introduction of SiC power modules...
The medium voltage (MV) high-speed drives are required for traction, wind energy, marine, aerospace, oil, and gas compressors applications. The MV converter must be able to switch at higher switching frequencies (> 5 kHz) to generate higher fundamental frequency AC input voltages for the motor (≥ 500 Hz) and thereby achieving high speed at the motor output (≥ 15000 rpm). This paper presents the...
The recently emerging SiC devices provide a promising solution to improve power converter efficiency and power density. However the expensive cost limited the widely use of SiC device. The parallel connection of SiC MOSFET and Si IGBT is introduced in this paper to utilize the advantage of this two different kinds of devices and proposed corresponding switching strategies. The switching loss and current...
Silicon carbide (SiC) devices have its unique advantages of high operating temperature, high voltage capability with low switching losses when compared to its silicon counterparts. This paper presents a systematic method for long-term reliability analysis for SiC devices. The reliability block diagrams (RBDs) have been established for a SiC power module with standard wire-bonded package. The reliability...
This article proposes a power converter solution for 1.5 kV DC photovoltaic applications and benchmark the benefits of commercially available SiC MOSFETS for the system power efficiency. The circuit solution is based on a full power factor three-level active neutral-point-clamped converter featuring reduced numbers of high-frequency switched semiconductors. A combination of Si IGBT and SiC MOSFET...
DC transmission has a lot of merits compared with AC transmission. For example, the cost of the construction and the equipment is less than that of the AC transmission system. Besides, more energy can be transmitted in DC transmission lines. Recently, multi-terminal transmission lines are required urgently. For that purpose, the reliable DC transmission circuit breakers must be developed. As we all...
This paper presents an experimental switching behaviour comparison of GaN HEMT and SiC MOSFET against their Si competitors, the Si SJ MOSFET and high speed Si IGBT, in the 650 V class. The devices are first compared using their respective datasheets. The test circuit is introduced and hard switching tests under inductive load are performed to reveal the switching performance of the devices. The differences...
This paper covers characterization and gate drive design for high voltage, gallium nitride (GaN), high electron-mobility transistors (HEMT) in a cascode structure. Parameters of high voltage cascode GaN HEMT devices are described and compared to state-of-the-art Si MOSFET devices. Challenges in designing high frequency GaN based power converter and common design practices are described. Effects of...
DC power delivery system is becoming an attractive alternative in an AC dominant world due to its higher energy efficiency and better cable utilization. It has already been applied in data centers, commercial buildings, electrical vehicle charge stations and micro grid systems, etc. Among many new issues that need to be addressed for the DC power delivery system, ultra-fast and accurate protection...
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