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In this paper, we present the first 3D Si MOS-capacitor-based radiation (gamma ray) sensor with high sensitivity and wide dose operation for occupational dosimetry applications. The capacitance changes almost linearly with the total radiation dose. By 3D structuring of Si surface with an anisotropic wet etching, surface area increases by 4 times in comparison with the 2D flat surface. Consequently,...
Gallium nitride (GaN) devices, as their better performance in high temperature, high efficiency and high power density converters, have been recognized as the most promising successor for Si MOSFET in the future. In order to take advantages of the superiority of depletion-mode GaN devices, a low voltage Si MOSFET is in series to drive the depletion-mode GaN device, which is well known as cascode structure...
This paper presents a high efficiency SiC power converter in pulsed power applications. SiC Power MOSFETs have 7∼10 times lower switching loss than Silicon counterparts. However, because of the large depletion capacitance, the SiC device switching loss will be higher than silicon device at zero current. Therefore, loss reduction method is proposed to further improve SiC gradient driver efficiency...
This paper is focused on the dynamic modelling of the polycrystalline silicon wafer-based photovoltaic cells under various operational and fault conditions. The models are drawn from the impedance changes observed using electrochemical impedance spectroscopy. In this paper, tests were carried out at different voltage bias levels under illumination, dark, uniform partial shading, and cell-mismatch...
With their intrinsic superiorities such as high breakdown electric field and high thermal conductivity, SiC MOSFETs are replacing Si IGBTs in power electronics applications. However, at higher voltages SiC MOSFETs are at early stage of development and are not commercialized yet. For the first time, this paper presents thorough static and dynamic performance characterization of 3.3 kV and 30 A discrete...
This paper presents a hybrid multilevel inverter with DC bypass. Mixed modulation method is proposed to balance dc voltage, and enables Si devices & wide bandgap devices integration to reduce power loss and achieve high power density. Simulation results are firstly provided to verify the validity of the proposed approach.
This paper reviews the advantages and the current status of commercially available SiC power MOSFETs, followed by an analysis of future trends and the potential for future development. Specifically, the review shows the advantages of the recently commercialized trench MOSFET structure and the potential for integration with SiC Schottky diodes to create fast MOSFETs. The current issues and the potential...
Metal-insulator-semiconductor capacitors used as a RC snubber attenuate voltage overshoots which may occur during switching phases. These devices feature good temperature stability up to 200°C and can be integrated very close to power switches on the same transfer substrate. As the capacitors need to withstand high voltages in most applications, thick dielectric layers have to be used, causing significant...
A novel vibrating ring gyroscope is proposed in this paper, and the structure employs axisymmetric ring resonator and capacitance transducers. Motion characteristics of the ring resonator and the setting of the capacitance electrodes are discussed in detail. The simulation results demonstrate that the natural resonant frequency of the operating mode of the gyroscope is 8.805 kHz and 8.807 kHz, and...
The fabrication of both n and p-type Si MOS capacitors using high k dielectric as insulator deposited by atomic layer deposition technique is presented. The interface obtained between the high k dielectric and the semiconductor substrate, critical for stability and feasibility of the experimental devices, is analyzed using both numerical calculation of the ideal capacitance — voltage (C-V) characteristics...
A DDR4 transmitter (TX) for direct-attach memory on a processor chip is presented as well as the design of the associated low-dropout linear voltage regulators (LDO) that generate the split-mode supply voltages for the thin-oxide protection of the TX output stages operated from the 1.2 V DDR4-supply. The TX uses AC-boost equalization. Signal-integrity (SI) simulations have shown that pre-emphasis...
The Integrated Fan Out (InFO) technology can accom-plish package miniaturization and successfully achieve “More than Moore's Law.” Its substrate-free technology also brings great cost-effective attraction to mobile and wearable applications. Ultra-thin integrated passive devices (IPDs) with high capacitance density can further shrink the InFO size and boost the bandwidth. Although the cost for the...
Based on the requirement of IPD RF SIP application, the silicon based inductor and capacitor and rules have been studied at first. Meanwhile, a two-order silicon-based 2.4GHz bandpass filter with the size of 1.8mm*1.8mm was obtained by the combination of inductances and capacitors. The insertion loss at 2.4GHz is −1.35dB. Furthermore, to improve the selective of the bandpass filter, one transmission...
This paper proposes a procedure for estimating the location of open or short defects in a Through Silicon Via daisy-chain structure. The equivalent inductance and capacitance are extracted, at low frequency, through the measured and/or computed Z11 parameter of a three dimensional model in which the short and open defects are intentionally created in specific points.
This paper describes a new symmetric inductor configuration for improved quality factor (Q). For symmetric inductors (SI), Q values are limited by lateral inter-turn capacitance. By realizing adjacent half segments of the spiral on top two (alternate) layers, an alternate layer symmetric inductor (ASI) is constructed. Significant reduction in lateral capacitance is observed which translates to improved...
Electromagnetic Crosstalk analysis is emerging as a fundamental necessity as a component of electronic system development. With the advent of advanced technologies and System on-Chip (SoC) architectures, ignoring electromagnetic crosstalk is highly risky resulting in significant delays in reaching the market on time as well significant cost over runs. This paper provides an overview of the state of...
In this paper, device performance metricsofjunctionless (JL) and dopingless (DL) field effect transistors (FETs) for analog and radio-frequency application are evaluated using technology computer added design (TCAD) tool. It is observed that the DL-FET offers 17% enhancement in ON-current and achieves 1.5 times cutoff frequency along with 10 dB improvement in intrinsic voltage gain in comparison to...
The subthreshold swing (SS) in MOSFETs is limited to 60 mV/dec change in drain current at room temperature by the Boltzmanr distribution of carriers, thus limiting its operating voltage (VD>SS×log Ion/IOFF). Ferroelectric FETs can achieve sub-60 mV/dec by harnessing the negative capacitance (NC) effect in a Ferroelectric (FE) material, thus enabling low voltage operation [1]. Previous works have...
Due to their favorable properties, extensive efforts have been done to extend the applications of Schottky diodes into infrared (IR) nonlinear applications. Primarily, efforts have been concentrated in reducing their series resistances and their capacitances in order to increase their cutoff frequencies [1]. Here, we introduce novel single crystal thin film Au-In0.53Ga0.47As Schottky diodes, in which...
In this paper, we present a scalable physics-based model that accurately predicts the steady-state high-frequency behavior of memristive RF switches. This model is, to the best of our knowledge, the first lumped RF memristor model that includes device parasitics obtained from physical measurements reported in the literature. Furthermore, we propose two topologies (series and shunt) for non-volatile...
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