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The progressive scaling demands effort from both the circuit and the device level, to cope with circuit variability and reliability issues. Advent of FinFET technology has suppresses the short channel effects and variability, but still suffers with self heating problem consequently increases temporal degradations. In this paper, we investigate severity of Negative Bias Temperature Instability (NBTI)...
As the interest on Network Virtualization continues to grow, so does the awareness of the many technical obstacles to transpose before the envisioned virtualized network environment may become a reality. A significant obstacle lies on the efficient assignment of virtual resources into physical ones. Performing the so-called mapping of a virtual network into a substrate network is a computationally...
Static Random Access Memories (SRAMs) are present nowadays in all CMOS products in large quantities. Besides, they are often very challenging both on process side (due to small dimensions) and on design side (due to performance request). As a consequence, managing their reliability is of prime importance, though it is quite complex due to their overall complexity. This paper demonstrates a full reliability-based...
Design for next generation DRAM on early development stage should be concerned about the intrinsic reliability margins and maximum Burn-in stress voltage. This paper proposes that BI stress voltage, when latent defects could not be evaluated by burn-in to obtain the acceleration parameters, is decided by the increasing ratio of historical burn-in stress voltage trend.
Negative Bias Temperature Instability (NBTI) is a degradation phenomenon that occurs in PMOS transistors during circuit lifetime. Recent works have proposed transistor level and circuit level models that allow designers to deal with such phenomenon. Based on these models and taking into account Random Dopant Fluctuation (RDF), we study the possibility of detecting SRAM core-cells that are prone to...
We present a practical, systematical method for the evaluation of the soft error rate (SER) of microelectronic devices. Existing methodologies, practices and tools are integrated in a common approach while highlighting the need for specific data or tools. The showcased method is particularly adapted for evaluating the SER of very complex microelectronic devices by engineers confronted to increasingly...
This paper introduces volume springs that provide the volume effect to a surface model when it is deformed. The estimation of the properties of the model takes the real material properties into consideration, where each spring stiffness is derived based on the elasticity, rigidity and compressibility modulus. The proposed model can be adopted to simulate soft objects such as a deformable human breast,...
A mechanism of DeltaVth variation of NBTI for SRAM load transistor is examined. The variation data is in good agreement with our proposed model. A large fluctuation of NBTI for small size pMOS is not observed in HCI measurement for nMOS, which may be due to the difference of recovery. Two types of equations to get DeltaVth from DeltaIdL by OTF measurement are compared and we have concluded which equation...
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