The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Lead Titanate (PbTiO3) thin films derived from metal alkoxide precursor solution through sol-gel method were deposited onto silicon substrates by dip coating. These films were deposited at different immersing times. The withdrawal speed on the other hand was fixed at 7 mm/s. The dielectric properties of these thin films were investigated as a function of frequency. The IV characteristics and micro-structural...
Anti-ferromagnetic BiFeO3/Bi3.15Nd0.85Ti3O12 (BFO/BNdT) multilayer films with remnant polarization of 22.1 ??C/cm2 have been fabricated by sol-gel method on Pt (100)/Ti/SiO2/Si (100) substrate. X-ray diffraction analysis indicates high (110) orientation and a relatively degree of (111) orientation in the multilayer achieved. The dielectric constant and the dissipation factor of the multilayer are...
Ferroelectric Pb(Zr0.53Ti0.47)O3 thin films with thickness of around 800 nm were prepared on LaNiO3 (LNO) buffered SiO2/Si substrates by sol-gel method. The LNO buffer layer serves as the bottom electrode and the template for growing PZT thin films with preferred orientation. The (110)-textured PZT thin films can be obtained on 250 nm-thick LNO buffered SiO2/Si substrates. Upon using the LNO buffer...
Ferroelectric lead zirconium titanate (Pb (ZrxTi1-x) O3) thin films with various thicknesses were fabricated on Pt/Ti/SiO2/Si substrates using the sol-gel method with 2.45 GHz microwave energy. Investigations have been made on the crystal structure, surface morphology, dielectric and ferroelectric properties of the films. The thicknesses of PZT film were in the range of 99 to 420 nm, and films were...
The nucleation and growth behavior of sol-gel-derived lead zirconate titanate (PZT) films was investigated at different rapid thermal annealing (RTA) processes. The effects of RTA on PZT film surface morphology, crystal orientation, residual stress, and properties were also studied and are discussed. PZT nucleation and growth behavior were found to be more sensitive to heating rate than to hold time...
The application of high dielectric Sr/sub 0.20/Ba/sub 0.8/TiO/sub 3/ (BST) thin films for Metal-Insulator-Semiconductor (MIS) capacitors was investigated. BST thin films were deposited on n-Si(100) substrates by the sol-gel method. We examined the characteristics of the MIS capacitor at 30/spl deg/C and 120/spl deg/C. The hysteresis loop was determined by high frequency (1 MHz) capacitance-voltage...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.