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This paper presents an analytic approach to obtain the optimum source and load impedance values for different criteria of maximum power gain, linearity and efficiency. A comparison of two identically rated commercially available 25W RF power transistors in silicon LDMOS and GaN-on-Si HEMT reveals that GaN HEMTs are relatively immune to optimization criteria popularly used by RF amplifier designers,...
Increasingly stringent requirements for higher power density and efficiency have driven development for lower on-resistance (Ron) and gate charge (Qg) power transistors. Gallium Nitride (GaN) and Silicon Carbide (SiC) are good contenders for replacing conventional Si power transistors. This work attempts to develop a driver IC to fulfil specific needs of Gallium Nitride Gate Injection Transistor (GIT),...
As GaN power devices emerge from research to industry, the characterization of these novel devices itself and its application in power electronic converters is essential. The purpose of this paper is to prove the capabilities of GaN technology using a novel 600 V normally-off GaN-on-Si transistor which shows no dynamic behavior of its on-resistance. A hard switching DC/DC converter prototype reveals...
GaN is very promising for power switching transistors taking advantages of the high breakdown strength with high saturation electron velocity. The lateral and compact device configuration enables high speed switching with reduced on-state resistance and parasitic capacitance. In this paper, state-of-the-art device technologies of GaN transistor and its monolithic integration for switching applications...
Between 5 and 10% of the world's electricity is wasted as dissipated heat in the power electronic circuits needed, for example, in computer power supplies, motor drives or the power inverters of photovoltaic systems. This paper describes how the unique properties of GaN enables a new generation of power transistors has the potential to reduce by at least an order of magnitude the cost, volume and...
State-of-the-art device technologies of GaN power switching transistors are reviewed. The presented technologies solve the technical issues on GaN transistors for practical use replacing currently used Si-based power devices. Thick epitaxial growth over 6-inch Si substrates enables low cost fabrication of GaN devices with high breakdown voltages. A new operating principle for the normally-off GaN...
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