The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, the impact of a severe on-state stress on the IDS (VDS, VGS) characteristics of AlInN/GaN devices is analyzed by electroluminescence technique performed at room temperature. In fact, the devices operate in bias conditions that allow measuring the bell- shaped gate current. To our knowledge, it is the first time that a bell-shaped gate current centered at a positive VGS and measured...
Location and properties of traps generated in AlGaN/GaN high electron mobility transistors submitted to electrical stress was studied using an integrated electrical and optical methodology. A spatial and spectral electroluminescence study reveals traps generated during both OFF- and ON-state stress to be located in the gate and access region close to the drain side of the gate edge, while UV-light...
A new methodology is developed to determine spatial location and properties of traps generated by electrical stressing of AlGaN/GaN high-electron mobility transistors, based on integrated optical and electrical analysis. Mild off-state stress increases irreversibly the number of traps located in the near-surface AlGaN region at the gate edge. A deep level with 0.45-eV activation energy in fresh devices...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.