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We have investigated the crystalline structure of Ni germanostanane/Ge1−x Snx contacts. Uniform Ni(Ge1−xSnx) layers on Ge1−xSnx can be formed with solid phase reaction by annealing Ni/G1−xSnx/Ge samples at 350°C. However, severe agglomeration and Sn precipitation from Ni(Ge1−xSnx) layers are observed after annealing at above 450 °C. We have also investigated the electrical properties of an Sn/n-Ge...
This paper discusses ohmic contact formation of Sn-based alloys on n-InSb. Most critical problem, we encountered when using a Sn/Au/Ni/Ti/Au metal stack, is an anomalous alloy extension of the ohmic metal. This was found to be resulted from rapid diffusion of Au. It is demonstrated that by removing the Au under the Ti barrier layer good contact resistance of less than 0.1 Ωmm can be obtained without...
We report the synthesis of Tin Oxide (SnO2) nanostructures on Silicon substrate and gold coated Silicon substrate by thermal evaporation method using a mixture of SnO2 and graphite powders at 1100˚C in nitrogen (N2) ambience at atmospheric pressure. The synthesized SnO2 nanostructure shows polycrystalline nature with tetragonal phase. The SnO2 nanowires with uniform diameter (∼35 nm) and length (∼30...
The energy dispersive X-ray (EDX)-based permeation and oxidation test has been further developed by a novel theoretical analysis, in which the gradient of chemical potential rather than the concentration gradient is employed. The EDX-based permeation and oxidation tests determine Cu flux coefficients in the CuO oxide layers to be 4.17times10-26 molldr(mldrsldrkJ/mol)-1exp(-70.30 kJldrmol-1/RT) in...
In-based solders were chosen for the low temperature bonding at lower than 180degC. Three kinds of bonding types on Au/Cu/Ti/SiO2/Si dies, which were Sn/In and Au/In for Type 1, Au/In and Au/Sn for Type 2, and InSn alloy and InSn alloy for Type 3, were studied expecting that the whole In- solder layer is converted to the mixed intermetallic compound (IMC) phases of In-Cu and In-Au IMCs after bonding...
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