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As IC technology advances to 16/14 nm and beyond, FinFET architecture with advantage of excellent leakage performance becomes main stream in IC industry. However, it also brings big challenges for integration and processes due to its very aggressive structure and profile, CD shrinkage, shadow effect and gap-fill difficulty. In this work, atomic layer deposition (ALD) metal films, including TaN, TiN...
This paper presents a fabrication process to manufacture air-gap capacitively-transduced RF MEMS resonators. 2-port measurements show motional impedance (Rx) < 1.3 k?? and quality factor (Q) > 65,000 at 223 MHz in vacuum. The fabrication process involves depositing a dual-layer spacer of 10 nm of SiO2 and 90 nm of hafnia via atomic layer deposition (ALD) followed by oxide release. Nanometer...
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