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This paper demonstrates the dependence of temperature coefficient of frequency (TCF) of silicon micromechanical resonators on charge carrier concentration. TCF compensation is demonstrated by degenerate doping of silicon bulk acoustic resonators (SiBARs) using both boron and aluminum dopants. The native TCF of for silicon resistivity of ...
We report on the degenerate doping of a silicon resonator as a new method for reducing its temperature coefficient of frequency (TCF). This is the first TCF reduction technique reported till date that takes advantage of free charge carrier effects on the elastic constants of silicon. The TCF of silicon bulk acoustic resonators (SiBAR) are reduced from -29 ppm/??C to -1.5 ppm/??C on 5 ??m thick devices...
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