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In this work, we studied the fabrication and characterization of strain sensors based on semiconductor materials for high temperature applications: non-stoichometric amorphous silicon carbide (a-SixCy) thin film and SOI (Silicon-On-Insulator) substrates. a-SixCy were deposited onto thermally oxidized (100) Si wafers by plasma enhanced chemical vapor deposition (PECVD) technique using silane (SiH4)...
This paper reports on the extension of the wafer-scale microtensile technique to the piezoresistive characterization of thin-films, demonstrated for in-situ n-doped poly-Si layers. In addition to the reliable extraction of mechanical properties, this extended high-throughput method enables the acquisition of linear and, for the first time, nonlinear piezoresistive coefficients, namely the first and...
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