The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
For future low-priced electronics, high performance thin film transistors (TFTs) are highly desirable. One possible way towards device optimization is the downscaling of the channel length (L) which allows higher device density, smaller device configuration and better performance. In this paper, we present a simulation study of bottom gate TFTs based on ZnO as semiconductor, SiO2 as insulator layer...
In this work, an investigation into the performance of Hetero-Dielectric Dual-Material-Gate SOI Tunnel FET (HD-DMG SOI TFET) by varying the work functions of both tunnel and auxiliary gates and analysing its influence on the transfer characteristics and the threshold voltage is done. With a suitable combination of work functions of both the tunnel and auxiliary gates, steeper Id-Vg variations and...
This work presents a novel 30 nm n-channel Silicon Germanium-on-Insulator (SGOI) based Tunnel Field Effect transistor with asymmetric source/drain material using Non-Local Band-to-Band tunneling model, where we have observed the better switching characteristic. This work also shows that the Miller capacitance is very small using Non-Local BTBT model with bandgap lowering. We also observed the effect...
In the most industrial processes, weighing machines are designed to automatically fill one or more types of the containers with a predetermined weight of particulates raw material using a controller. The performance of the machine is closely related to the accuracy of measurement and speed of dynamic response, which are contradictory. For a gravimetric filling machine, a novel adaptive dynamic state...
Non-linearity performance of the devices is exhibit serious distortions which generate unwanted noise signal with different frequencies. These unwanted signals will interfere or change the desired output in analog and RF circuit application. So, the important reliability issue is to investigate the linearity and analog performance at transistor level. In this paper, a gate stack double gate (GS-DG)...
The paper presents new logic synthesis methods for single-output incomplete multi-level binary circuits using Memristor-based material implication gates. The first method follows Lehtonen's assumption of using only two working memristors. The algorithm minimizes the number of implication (IMPLY) gates, which corresponds to minimizing the number of pulses or the delay time. This greedy search method...
By first-principle calculations, variation of I-V curves are plotted by applying strains on germanene zig-zag nano-ribbon FET. The vibrational and electronic properties of 2D buckled honeycomb structure of germanene monolayer subjected to the strain have been investigated. The negative differential resistance (NDR) behaviour of short channel germanene zig-zag nano-ribbon FET is analysed. Effect caused...
The ongoing KOM Project is researching how to construct affordable and sustainable mosquito-free zones, in malaria endemic sub-Saharan Africa and elsewhere. Mosquitoes are vectors for several diseases malaria, Chikungunya, dengue fever, lymphatic filariasis (elephantiasis), Ross River fever, West Nile virus disease and yellow fever. Isolating mosquitoes from hosts also breaks disease transmission...
Fundamental concept gaps in math, science, and physics, as well as other gaps students and faculty perceive in the curriculum, can have crucial implications for faculty teaching courses and for students progressing through a civil engineering program. Faculty noted anecdotally that students were getting midway through the curriculum and having extreme difficulty with concepts in certain courses. A...
Although the traditional finite volume scheme based on boxes obtained from the dual Voronoi grid has been employed successfully for classical semiconductor device simulation for decades, certain drawbacks such as the required Delaunay property of the underlying mesh limit its applicability for two-and particularly three-dimensional device simulations on unstructured meshes. We propose a discretization...
We briefly discuss the evolution of Non-Volatile Memory (NVM) technology in term of macro-trends and their implications for modeling activities in an industrial R&D environment. Some examples of difficult modeling issues for different NVM techologies are mentioned, and finally both present needs and future challanges are critically reviewed.
We show that scaling rules, quantum confinement in thin bodies, and the resulting gate leakage render imperative the use of low-dimensionality materials as channels in devices scaled beyond the 10 nm gate length. We then consider a few examples of two-dimensional materials of great interest, graphene and bilayer graphene, and show how the dielectric environment (gate and interlayer insulators, nearby...
This paper focuses on circuit simulation for thin film transistors that can be based on organic or inorganic metal-oxide materials and fabricated using solution processing such as printing or using the more conventional methods such as sputtering. In particular, the paper focuses on solution processed metal oxides. Existing compact device models are generalized in the article to include AC properties...
In a very large vessel, maintain ultrahigh vacuum (UHV) is a challenge. The LIGO (Laser Interferometer Gravitational Wave Observatory vacuum envelope is one of the large vacuum chambers in the world. LIGO vacuum system consists of two arms of 4 km long beam tubes of 1.2 meter diameter. Ultrahigh Vacuum (UHV) environment is required to reduce residual gas phase noise to enhance accuracy of measurement...
This paper presents a high temperature (HT) gate drive and protection circuit using commercially available discrete components for SiC Power MOSFETs. The transformer isolated gate drive and protection circuit is designed, built and tested. Temperature dependence of the circuit is investigated and discussed, proving that the discrete component circuit can get rid of the leakage current caused by the...
The MOSFET device performance deteriorates when it is scaled down to 45nm node and an alternative device structure being studied. FinFETs are the alternative new device structure, which replaces the MOSFET. The comparative study of Double Gate MOSFET (DGMOSFET), Tri-gate Fin Field Effect Transistor (FinFET) and Gate All Around (GAA) FinFET structures has been done for 22nm and 16nm technologies. The...
As an answer to the difficulties in improving the figures of merit of deeply-scaled CMOS devices, researchers have looked at alternative materials and technologies for implementing new devices that can overcome the limitations of CMOS. Graphene has emerged as one of the most promising candidates among these new materials, recent works have demonstrated the implementation of electrostatically-controlled...
A PHM (prognostics and health management) scheme for electronic product is proposed on the basis of physics-of-failure. This method can help online reliability evaluation under real environmental condition by the identification of potential failure mechanism and failure position for devices, products and systems, so as to establish the foundation of reliability assessment for new material, new structure...
We have developed an instructional program for teaching literacy in the use of Unified Modeling Language (UML) modeling software at the University of Kitakyushu. In this paper, we show the instructional design of our teaching materials for the literacy, which students master as part of our program, and assess their effectiveness. Our strategies include three levels of instruction, each with numerous...
In the last decade, we have experienced a fascinating transformation in the research and development of atomically thin-layered material (ATLM) systems. Graphene and its compounds have enabled the development of novel devices for a wide variety of applications in an extremely short period of time. In addition, non-graphene ATLMs have recently been utilized to produce devices with exceptional performances...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.