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Gallium Nitride, in the form of epitaxial HEMT transistors on silicon carbide substrates is now almost universally acknowledged as the replacement for silicon bipolar, power MOSFET, high power devices in the RF, microwave, and mmW arenas. This is particularly true for GaN-on-SiC based MMIC's which enable state-of-the-art high frequency performance and bandwidth to be extended into Ku-Band and Ka-Band...
Gallium Nitride (GaN) based power devices have been demonstrated to deliver higher energy efficiency than their Silicon (Si) counterparts for 200–1.2kV rated applications. The benefits of GaN technologies and their market potential will be highlighted in this paper together with the main challenges that GaN-based power systems need to overcome to reach their full potential and finally enter the market...
Bi-directional switches, also called four quadrant switches (FQS), are the basic building blocks in many power converter circuits, such as cyclo-converters, matrix converters etc. Conventional approaches to realize bi-directional switch involves combination of unidirectional controllable blocking device (IGBT or MOSFET) and diode. In this approach, current flows through multiple devices for any direction...
Gallium nitride (GaN) devices, as their better performance in high temperature, high efficiency and high power density converters, have been recognized as the most promising successor for Si MOSFET in the future. In order to take advantages of the superiority of depletion-mode GaN devices, a low voltage Si MOSFET is in series to drive the depletion-mode GaN device, which is well known as cascode structure...
This paper presents state of the art split drain current magnetic sensors fully compatible with the bulk silicon and SOI technology. While lateral double-diffused magnetic sensitive MOSFET with integrated n-type Hall plate exhibits an order of magnitude higher relative current magnetic sensitivity compering with the conventional split drain silicon MagFETs, novel dual-gate four-terminal magnetic sensor...
We present a new bonding process for gallium nitride (AlGaN/GaN) devices from Si onto diamond substrates. In our technology AlGaN/GaN-devices are transferred from silicon (Si) onto single (SCD) and polycrystalline diamond (PCD) substrates by van der Waals bonding. Load-pull measurements on Si and sCd at 3 GHz and 50 V drain bias show comparable power-added-efficiency (PAE) and output power (Pout)...
This paper presents an experimental switching behaviour comparison of GaN HEMT and SiC MOSFET against their Si competitors, the Si SJ MOSFET and high speed Si IGBT, in the 650 V class. The devices are first compared using their respective datasheets. The test circuit is introduced and hard switching tests under inductive load are performed to reveal the switching performance of the devices. The differences...
This paper covers characterization and gate drive design for high voltage, gallium nitride (GaN), high electron-mobility transistors (HEMT) in a cascode structure. Parameters of high voltage cascode GaN HEMT devices are described and compared to state-of-the-art Si MOSFET devices. Challenges in designing high frequency GaN based power converter and common design practices are described. Effects of...
Stringent requirements on higher power density and efficiency for power electronics converters in applications such as server/telecom power systems and industrial motor drives necessitate transformative changes in power electronic architecture as well as replacement of Si based FETs with wide bandgap devices. For power-factor-correction (PFC) circuits, the path for greater power density necessitates...
The U.S. Department of Energy's Advanced Research Project Agency for Energy (ARPA-E) was established in 2009 to fund creative, out-of-the-box, transformational energy technologies that are too early for private-sector investment, at make-or break points in their technology development cycle. Development of advanced power electronics with unprecedented functionality, efficiency, reliability, and reduced...
GaN emitters have historically been of hexagonal phase due to natural crystallization. Here we introduce a cubic phase GaN emitter technology that is polarization-free via cointegration on cheap and scalable CMOS-compatible Si(100) substrate.
Three GaN-based buck switching power stage architectures are implemented using discrete GaN High Electron Mobility (HEMTs) devices and compared with respect to efficiency, switching speed (2 to 10MHz), and power conversion ratio for medium-power applications. The three presented power stage architectures are: a single-stage buck, a multi-phase buck with 2 phases, and a stacked interleaved configuration...
This paper presents the project procedure to develop a Half-Bridge (HB) Non-Isolated DC-DC converter applying a Normally-On GaN-based switch. Normally-on devices (D-mode) present the benefit of lower costs in terms of production if compared with E-mode devices, which gives an economic motivation to study and develop power electronics converters applying this technology. The devices under test (DUTs)...
Gallium Nitride (GaN) based devices on Silicon (Si) substrates (GaN-on-Si) promise unmatched performance at low cost. Despite this theoretical promise, the lattice and thermal conductivity mismatch between the GaN and Si has obstructed the realization of reliable electrically graded high voltage devices. Recently, a small number of manufacturers have claimed the successful development of such devices...
Wide-bandgap (WBG) devices are believed as the alternate of silicon switches for high-efficiency and high-power-density power electronics converters. While two major challenges of WBG devices remain as high cost (∼5 times of Si) and less options (the maximum power rating for GaN is only 650V/60A), paralleling GaN with Si could be the potential solution to solve pains above. In this paper, two SMT...
Gallium Nitride (GaN) semiconductors have extremely low switching loss, high breakdown voltage, and high junction temperature rating. These characteristics enable improved device performance and thus improved switch mode power converter designs. This paper evaluates the Pareto-optimal performance improvements for a DC generation system with predicted GaN loss characteristics and a rigorous multi-objective...
In this work an analysis of the coordinated operation between the wind farm (WF) El Angelito and the hydroelectric power station Futaleufú, located in Chubut, Argentina, is carried out. With a power of 200MW, El Angelito would be the largest WF in the country. With this new generation, the elements of the system will not be able to handle both sources at nominal power. In particular, there would be...
Wide bandgap (WBG) semiconductors exhibit superior material properties, enabling power devices to operate at higher blocking voltages, switching frequencies, and junction temperatures. Power converters featuring WBG devices have higher power density and are more efficient and reliable than those using existing silicon (Si) devices. This paper presents the design of a non-isolated dc-dc buck-boost...
Wide bandgap semiconductors are promising regarding loss reduction and increase of switching frequency. In the specific case of two level power converter it has not been up to now clearly shown the potential of SiC and GaN in comparison with Si semiconductors. In this paper, a multi-variable analysis for different devices is carried out, considering system efficiency, heatsink size and output filter...
The performance of a Modular Multilevel Converter (MMC) is presented in this paper, comparing Silicon (Si) and Gallium Nitride (GaN) semiconductors. Moreover, the benefits of high-frequency operation in a MMC topology are analysed along with a power loss distribution evaluation, highlighting the main advantages and drawbacks of different semiconductor technologies.
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