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This paper presents electromagnetic analysis of Si-based small period blazed reflection gratings for a period of 0.6-1.5 μm in terms of the rigorous coupled wave analysis (RCWA) and its fabrication using fast atom beam (FAB) etching method. The optimized blazed gratings were successfully fabricated on a slanted silicon substrate by FAB etching method, and diffraction efficiencies (DE) for four kinds...
Freestanding circular GaN gratings are fabricated on a GaN-on-silicon substrate, and epitaxial growth of GaN is subsequently conducted on the prepared GaN template by molecular beam epitaxy growth. With the assistance of circular GaN gratings, the surface diffusion is improved and thus, the selective growth of GaN takes place. Epitaxial circular gratings with InGaN/GaN multiple quantum wells are generated...
A tunable grating is fabricated by micromachining a GaN crystal layer grown on Si substrate. The tunable grating consists of grating lines, electro-static comb-drive actuator and connection springs. The grating consists of 85nm wide, 12μm long 24 grating lines with 674nm period. The crystallization stress of an HfO2 layer deposited on the GaN crystal is used to compensate the residual stress of the...
A polarization independent grating coupler for coupling the light from an optical fiber into a silicon-on-insulator (SOI) waveguide with a coupling efficiency independent of the polarization of the incident light was proposed. Such a polarization independent grating coupler can be achieved by superimposing the grating couplers which were originally designed for coupling solely the TE and the TM modes...
A very shallow multilayer etched-grating is proposed as a wavelength demultiplexer. Two different configurations are compared for diffraction efficiency and resolution. Single-step-etch fabrication designs are presented and modeled for their grating efficiency and overall performance
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