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An 8T SRAM fabricated in 45 nm SOI CMOS exhibits voltage scalable operation from 1.2V down to 0.57V with access times from 400 ps to 3.4 ns. Timing variation and the challenge of low voltage operation are addressed with an AC-coupled sense amplifier. An area efficient data path is achieved with a regenerative global bitline scheme. Finally, a data retention voltage sensor has been developed to predict...
An 8T SRAM fabricated in 45 nm SOI CMOS exhibits voltage scalable operation from 1.2 V down to 0.57 V with access times from 400 ps to 3.4 ns. Timing variation and the challenge of low-voltage operation are addressed with an AC-coupled sense amplifier. An area efficient data path is achieved with a regenerative global-bitline scheme. Finally, a data-retention-voltage sensor is developed to predict...
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