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Reaction-Diffusion (R-D) framework for interface trap generation along with hole trapping in pre-existing and generated bulk oxide traps are used to model Negative Bias Temperature Instability (NBTI) in differently processed SiON p-MOSFETs. Time, temperature and bias dependent degradation and recovery transients are predicted. Long-time power law exponent of DC degradation and uniquely renormalized...
The electronic properties of amorphous chalcogenide materials to be used in a phase change memory (PCM) play a critical role in limiting the read/program speed and voltage of the cell. This work presents a comprehensive experimental analysis of the recovery transient of threshold voltage VT after reset. It is shown that VT displays a fast increase in the first 30 ns after reset, followed by a slower...
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