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Items from 1 to 20 out of 155 results

article

P‐256: Late‐News Poster: Enhancement of OLED Color Conversion Efficiency and Viewing Angle Dependency Using Organic Color Conversion Layers

Youngrok Kim, Jiho Roh, Min Chul Suh

SID Symposium Digest of Technical Papers > 55 > 1 > 2230 - 2234

Applying the Host‐Dopant System to organic color conversion layers (OCCL) has resulted in a high color conversion efficiency CCE) compared to previous commercial methods. The OCCL exhibited an impressive CCE of 123.1%, surpassing that of quantum dot (QD) conversion layer by 61.3%. Furthermore, we observed that the viewing angle characteristics of blue top‐emission organic light emitting diodes (OLED)...

article

20‐2: High‐resolution Pixelated Quantum Dot Light Emitting Diodes via Electrohydrodynamic Printing Technology

Xu Yuan, Haowei Wang, Yang Liu, Zhuo Chen, more

SID Symposium Digest of Technical Papers > 55 > 1 > 240 - 242

In this study, we achieved high‐resolution pixelated QLED device with 500 pixels per inch (ppi) through electrohydrodynamic printing (EHD) technology. We optimize the EHD printing process by controlling ink viscosity and printing speed to obtain a uniform and flat emission layer film. Then, we prepared high‐resolution pixelated bottom‐emission and top‐emission PMQLED with maximum current efficiencies...

article

75‐1: Real Time Doping Management of High‐Performance Organic Electroluminescence Displays

Yong-Woon Lim, Won Hyuk Jang, Hyo-Jin Kim, Hyeon Hwan Kim

SID Symposium Digest of Technical Papers > 54 > 1 > 1056 - 1059

Recently, organic light emitting diode (OLED) and quantum dot (QD)‐OLED displays are attracting attention as representative displays ranging from mobile to tablet, laptop, and TV markets. In these OLED and QD‐OLED displays, the individual thickness and doping ratio of functional multilayer films of organic electroluminescence (EL) are the most important factors in device characteristics such as color...

article

61‐3: Method for Controlling Surface Energy of Bank Surfaces to Fabricate High‐Thickness Inkjet‐printed QD Color Conversion Layer

Sang Youn Lee, Chun Sakong, Kyung‐Tae Kang, Byeong‐Kwon Ju, more

SID Symposium Digest of Technical Papers > 54 > 1 > 872 - 875

Quantum dot (QD) color conversion layer (CCL) has been attracting interest due to their fascinating properties. The QD CCL with thickness of microns is required to successfully block blue light leakage. However, controlling the thickness profile in micro‐scale display pixels via the IJP remains a challenge. In this study, we controlled the surface energy of CCL by using CF₄‐plasma treatment to control...

article

P‐82: Prediction Methodology for the Optical Properties of QDs with Arbitrary 3D Shape

Hyung Uk Cho, Bowoon Kim, Jintaek Cho, Richard James, more

SID Symposium Digest of Technical Papers > 53 > 1 > 1338 - 1339

Recently, researchers have strived to enhance the optical characteristics of Quantum Dots (QDs) by carefully tailoring the QD material composition, shape and size. In this endeavor, simulation proves an invaluable tool to assess and optimize the QD structure. In this paper, the optical properties of QD structures are explored, taking into account the complex band structure of the QD and its geometric...

article

3‐4: Highly Efficient Green Top‐Emission Light‐Emitting Diodes Based on Indium‐Phosphide Quantum Dots

Di Zhang, Dong Li, Jingwen Feng, Youqin Zhu, more

SID Symposium Digest of Technical Papers > 53 > 1 > 9 - 11

One of the major challenges for novel display technologies based on quantum dot light‐emitting (QLED) was replacing toxic emission layers. Indium phosphide (InP) quantum dots were considered as the most promising alternative materials. In this work, the optimal vertical light extraction could be obtained by simulating the different thickness of electron transport layer (ETL) in devices. The Mg‐doped...

article

Comparison between GaN and InN quantum‐dot semiconductor optical amplifiers

Ali Gehad Al‐Shatravi, Muaffak Abdullah, Amin Habbeb Al‐Khursan

Microwave and Optical Technology Letters > 63 > 3 > 993 - 1001

GaN/Al_0.5Ga_0.5N and InN/Al_0.5Ga_0.5N as a III‐nitride quantum dot semiconductor optical amplifiers (QD‐SOAs) are studied in detail in this paper. The optical gain, spontaneous emission rate, and lineshape function are calculated using non‐Markovian relaxation compared with Markovian one. Gain is then connected with the rate equations model to obtain a dB gain, output power, and shot noise in these...

article

86‐1: Invited Paper: Nano‐particle Heat Sink for Quantum‐dot Color Conversion

Jinhyun Cho, Pilyong Oh

SID Symposium Digest of Technical Papers > 51 > 1 > 1296 - 1298

Oxygen, temperature, and light deteriorate Quantum Dot (QD)’s reliability. Controlling oxygen and temperature is rather easy, but reliability problem under high light flux is more difficult. This study showed nano heat sink can improve QD reliability.

article

Strong microcavity effects in hybrid quantum dot/blue organic light-emitting diodes using Ag based electrode

Jung Hyuk Im, Kyung-Tae Kang, Jong Sun Choi, Kwan Hyun Cho

Journal of Luminescence > 2018 > 203 > C > 540-545

We investigated the color conversion characteristics of a quantum dot/organic light-emitting diode (QD/OLED) by altering blue emission using the microcavity effect. Compared to the ITO-based OLED, the WO₃/Ag/WO₃ (WAW)-based OLED has a narrow shape of resonance and high cavity enhancement factor. As a result, the peak emission intensity wavelength remarkably shifts as the thickness of the WO₃ layer...

article

In Vivo Tumor-Targeted Dual-Modality PET/Optical Imaging with a Yolk/Shell-Structured Silica Nanosystem

Sixiang Shi, Feng Chen, Shreya Goel, Stephen A. Graves, more

Nano-Micro Letters > 2018 > 10 > 4 > 1-11

Silica nanoparticles have been one of the most promising nanosystems for biomedical applications due to their facile surface chemistry and non-toxic nature. However, it is still challenging to effectively deliver them into tumor sites and noninvasively visualize their in vivo biodistribution with excellent sensitivity and accuracy for effective cancer diagnosis. In this study, we design a yolk/shell-structured...

article

Piezotronic effect on the luminescence of quantum dots for micro/nano-newton force measurement

Yan Zhang, Jiaheng Nie, Lijie Li

Nano Research > 2018 > 11 > 4 > 1977-1986

The luminescence of semiconductor quantum dots (QDs) can be adjusted using the piezotronic effect. An external mechanical force applied on the QD generates a piezoelectric potential, which alters the luminescence of the QD. A small mechanical force may induce a significant change on the emission spectrum. In the case of InN QDs, it is demonstrated that the unforced emission wavelength is more than...

article

Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers

Xiang-Bin Su, Ying Ding, Ben Ma, Ke-Lu Zhang, more

Nanoscale Research Letters > 2018 > 13 > 1 > 1-6

The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot lasers with superior device performances. In the process of growing high-density InAs/GaAs quantum dots, bimodal size occurs due to large mismatch and other factors...

article

Recent Advances on Quantum-Dot-Enhanced Liquid-Crystal Displays

Haiwei Chen, Juan He, Shin-Tson Wu

IEEE Journal of Selected Topics in Quantum Electronics > 2017 > 23 > 5 > 1 - 11

We review recent advances in quantum dot (QD)- enhanced liquid crystal displays (LCDs), including material formulation, device configuration, and system integration. For the LCD system, we first compare the color gamut difference between the commonly used Gaussian fitting method and that using real emission spectra. Next, we investigate the Helmholtz–Kohlrausch effect. Our simulation results indicate...

article

Analysis of polarized light generation in anisotropic strained quantum dots

C. M. S. Negi, Dharmendra Kumar, Jitendra Kumar

Journal of Computational Electronics > 2017 > 16 > 3 > 805-813

A theoretical analysis of the optical characteristics and polarization properties of quantum dot laser which uses interband transitions in shape asymmetric InGaAs/GaAs QDs is presented. We use multi-band effective mass k.p model with the strain effect taken into account to compute the electronic structure of asymmetric QDs. In-plane shape asymmetry in QDs is accounted through the anisotropic parabolic...

article

Carcinoembryonic antigen detection with “Handing”-controlled fluorescence spectroscopy using a color matrix for point-of-care applications

Weijian Qin, Kan Wang, Kun Xiao, Yafei Hou, more

Biosensors and Bioelectronics > 2017 > 90 > C > 508-515

In this study, we developed a power-free, accurate, and portable diagnostic platform called Handing based on embedded technology, which can rapidly detect fluorescent signals from quantum dots (QDs) on lateral flow test strips (LFTSs). The Handing system has three components: a hand-held test terminal, LFTS cartridge, and data server. The hand-held test terminal is the primary system component and...

article

Integration of Prism Sheet on Quantum Dot Film With Bridge Patterns to Enhance Luminance of LED Backlight Unit

Se-Eun Kim, Jae-Yong Lee, Min-Ho Shin, Hyo-Jun Kim, more

IEEE Transactions on Electron Devices > 2017 > 64 > 3 > 1153 - 1160

An integrated prism sheet on quantum dot (QD) film with bridge patterns has been proposed to increase the optical efficiency of an LED backlight unit. The bridge patterns were designed, such that they not only extract the light trapped in a QD film but also change the optical path effectively toward the vertical direction. We verified our design concept and geometrical parameters by optical simulation,...

article

ZnCdSe/ZnSe quantum-dot semiconductor optical amplifiers

Muwaffaq Abdullah Al-Mossawi

Superlattices and Microstructures > 2017 > 102 > Complete > 407-416

Gain of CdZnSe quantum dot (QD) semiconductor optical amplifiers (SOAs) is studied theoretically using non-Markovian gain model including many-body effects. The calculations are done at three mole fractions. Spontaneous emission and noise figure of the amplifier are studied. The effect of shot noise is included. High gain, polarization independence, and low noise figure are characterize these QD-SOAs...

article

Effects of Size and Distribution of Silver Nanoparticles on Directional Fluorescence Emission Enhancement

Zhi-Hui Chen, Lina He, Yang Wang, Zhixing Gan

IEEE Photonics Journal > 2017 > 9 > 1 > 1 - 8

Enhanced directional fluorescence emission (DFE) is crucial for the optical signal collection by spectrometer/microscopy in biological and medical detection. In this paper, we systematically report the enhanced excitation and DFE of quantum dot (QD) by silver nanoparticles (AgNPs) through theoretical calculations. A finite difference time-domain method is used in the calculations. By changing the...

article

Transport Properties of a Nonequilibrium Quantum Dot Connected to Ferromagnetic Leads

Zhang Yongmei

International Journal of Theoretical Physics > 2017 > 56 > 3 > 841-850

In this paper, transmission resonance and conductance properties of nonequilibrium quantum dot connected by ferromagnetic leads are investigated. Thermoelectric properties are also studied. Using the tight-binding formalism and numerically solving the Schrodinger equation, spin-dependent transmissions are obtained and plotted as a function of incoming electron energy. Transmissions of spin up and...

chapter

External-cavity quantum-dot laser with silicon photonics waveguide mirror for four-wavelength simultaneous oscillation with an 800 GHz channel spacing

Nami Yasuoka, Mitsuru Ishida, Kazumasa Takabayashi, Ayahito Uetake, more

2016 International Semiconductor Laser Conference (ISLC) > 1 - 2

2016 International Semiconductor Laser Conference (ISLC)

Using a single external-cavity laser combined with a silicon photonics nanowire waveguide chip and a 1.3 µm quantum dot gain chip integrated with a spot-size converter, four-wavelength simultaneous oscillation with an 800 GHz channel spacing was demonstrated. Stable four-wavelength simultaneous oscillation and low relative intensity noise were obtained.

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QUANTUM DOT (QD) (155)
QUANTUM DOT LASERS (36)
QUANTUM DOTS (36)
GALLIUM ARSENIDE (31)
III-V SEMICONDUCTORS (30)
INDIUM COMPOUNDS (30)
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INAS-GAAS (11)
LASER MODES (10)
SEMICONDUCTOR LASERS (10)
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OPTICAL MODULATION (9)
STIMULATED EMISSION (9)
WAVELENGTH 1.3 MUM (9)
BANDWIDTH (8)
CURRENT DENSITY (8)
MATHEMATICAL MODEL (8)
QUANTUM WELL (QW) (8)
TEMPERATURE MEASUREMENT (8)
EQUATIONS (7)
LASER THEORY (7)
MODULATION (7)
OPTICAL PUMPING (7)
SURFACE EMITTING LASERS (7)
THRESHOLD CURRENT (7)
ABSORPTION (6)
CAVITY RESONATORS (6)
CROSS-GAIN MODULATION (XGM) (6)
GAIN (6)
NANOPARTICLES (6)
OPTICAL IMAGING (6)
OPTICAL SATURATION (6)
OPTICAL WAVELENGTH CONVERSION (6)
PHOTOVOLTAIC CELLS (6)
QUANTUM WELL LASERS (6)
SUPERLUMINESCENT DIODES (6)
TEMPERATURE (6)
ALUMINIUM COMPOUNDS (5)
FLUORESCENCE (5)
GROUND STATES (5)
HIGH-SPEED OPTICAL TECHNIQUES (5)
INAS (5)
INDIUM PHOSPHIDE (5)
INGAAS (5)
INJECTION CURRENT (5)
INTEGRATED OPTICS (5)
LASER CAVITY RESONATORS (5)
LINEWIDTH ENHANCEMENT FACTOR (5)
NUMERICAL MODELS (5)
OPTICAL FILTERS (5)
OPTICAL GAIN (5)
OPTICAL WAVEGUIDES (5)
POWER GENERATION (5)
SEMICONDUCTOR GROWTH (5)
SEMICONDUCTOR LASER (5)
SILICON (5)
VERTICAL CAVITY SURFACE EMITTING LASERS (5)
CANCER (4)
COLOR (4)
DIODE LASERS (4)
ENERGY STATES (4)
GAAS (4)
HIGH SPEED OPTICAL TECHNIQUES (4)
INFRARED DETECTORS (4)
LASER MODE LOCKING (4)
LASER NOISE (4)
LASER STABILITY (4)
LOGIC GATES (4)
MICROWAVE PHOTONICS (4)
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RADIATIVE RECOMBINATION (4)
STATIONARY STATE (4)
STRAIN (4)
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TEMPERATURE 293 K TO 298 K (4)
THRESHOLD CURRENT DENSITY (4)
WAVELENGTH MEASUREMENT (4)
ANNEALING (3)
APERTURES (3)
BIOMEDICAL OPTICAL IMAGING (3)
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CROSS-GAIN MODULATION (3)
CURRENT MEASUREMENT (3)
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Search results

P‐256: Late‐News Poster: Enhancement of OLED Color Conversion Efficiency and Viewing Angle Dependency Using Organic Color Conversion Layers

20‐2: High‐resolution Pixelated Quantum Dot Light Emitting Diodes via Electrohydrodynamic Printing Technology

75‐1: Real Time Doping Management of High‐Performance Organic Electroluminescence Displays

61‐3: Method for Controlling Surface Energy of Bank Surfaces to Fabricate High‐Thickness Inkjet‐printed QD Color Conversion Layer

P‐82: Prediction Methodology for the Optical Properties of QDs with Arbitrary 3D Shape

3‐4: Highly Efficient Green Top‐Emission Light‐Emitting Diodes Based on Indium‐Phosphide Quantum Dots

Comparison between GaN and InN quantum‐dot semiconductor optical amplifiers

86‐1: Invited Paper: Nano‐particle Heat Sink for Quantum‐dot Color Conversion

Strong microcavity effects in hybrid quantum dot/blue organic light-emitting diodes using Ag based electrode

In Vivo Tumor-Targeted Dual-Modality PET/Optical Imaging with a Yolk/Shell-Structured Silica Nanosystem

Piezotronic effect on the luminescence of quantum dots for micro/nano-newton force measurement

Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers

Recent Advances on Quantum-Dot-Enhanced Liquid-Crystal Displays

Analysis of polarized light generation in anisotropic strained quantum dots

Carcinoembryonic antigen detection with “Handing”-controlled fluorescence spectroscopy using a color matrix for point-of-care applications

Integration of Prism Sheet on Quantum Dot Film With Bridge Patterns to Enhance Luminance of LED Backlight Unit

ZnCdSe/ZnSe quantum-dot semiconductor optical amplifiers

Effects of Size and Distribution of Silver Nanoparticles on Directional Fluorescence Emission Enhancement

Transport Properties of a Nonequilibrium Quantum Dot Connected to Ferromagnetic Leads

External-cavity quantum-dot laser with silicon photonics waveguide mirror for four-wavelength simultaneous oscillation with an 800 GHz channel spacing

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