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The impact of the built-in stress of the SiN passivation layer on p-GaN gate High Electron Mobility transistors (HEMTs) is investigated through TCAD simulations. Local modifications of electron confinement in the channel area due to stressor deposition can be exploited to increase the threshold voltage independently of the ON-state resistance (up to +1.5 V for tsiN = 200 nm, σsin = −2GPa and LG =...
This paper presents a systematic characterization of a 650 V/13 A enhancement-mode GaN power transistor with p-GaN gate. Static and dynamic device characteristics are measured by taking into account of trapping induced effects such as current collapse and threshold voltage instability. Switching performance is evaluated up to 400 V, 10 A using a custom designed double-pulse test circuit. Optimal gate...
A quasi-bipolar channel modulation instability mechanism of the commercial P-GaN gate High Electron Mobility Transistor (HEMT) device is proposed. The device operation instability phenomenon caused by the quasi-bipolar channel modulation is investigated. Both the hole injection and the electron pumping mechanism of the P-GaN/N-AlGaN/N-GaN gate structure are observed to have the ability to influence...
A pathway to increase the threshold voltage of p-GaN gate high-electron-mobility transistors (HEMTs) is presented. The hole depletion width in the p-GaN layer at the gate interface is one of the key controlling factors of in p-GaN gate HEMTs. In order to increase the depletion width, we devise a new device structure of p-GaN gate HEMT having a source-connected p-GaN bridge...
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