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A 1.5 A normally-off GaN transistor for power applications in p-type GaN gate technology with a modified epitaxial concept is presented. A higher threshold voltage is achieved while keeping the on-state resistance low by using an Al-GaN buffer instead of a GaN buffer. Additionally, the AlGaN buffer acts as a back-barrier and suppresses source-drain punch-through currents in the off-state. P-GaN gate...
We report a normally-off GaN-based transistor using conductivity modulation, which we call GIT (gate injection transistor). This new device principle utilizes hole-injection from p-AlGaN to AlGaN/GaN heterojunction, which increases electron density in the depleted channel resulting in dramatic increase of the drain current owing to the conductivity modulation. The fabricated GIT exhibits the threshold...
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