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In this paper, the material and electrical properties of newly developed gate dielectrics were investigated by SIMS depth profile. NMOS transistor structures were fabricated by thermally grown radical oxidation (TGRO) in a batch type thermal processor and densified by plasma re-oxidation in a slot processor, followed by post oxidation anneal process to cure the plasma damage and nitridation in N2...
It is demonstrated that thin oxynitride (SiON) films can be grown on single crystal (100) silicon substrates at a growth temperature of 400 degC, yielding high-quality electrical insulating and reliability properties which are compatible with the IC industry requirements. This is a drastic reduction in the growth temperature with respect to thermally grown SiO2 films at 1000 degC, which are conventionally...
Electron capture and excess current after the substrate hot-hole injection into a 131 /spl Aring/ oxide have been studied. The gate current-gate voltage characteristics, drain current-gate voltage characteristics, and capacitance-voltage curves in p-channel MOSFETs were measured before and after the hole injection and after subsequent electron injection. Excess current obviously appeared under positive...
A new oxide formation technology featuring oxidation in a strongly reductive ambient followed by an Ar gas annealing has been developed. We call this oxidation method H/sup */-H/sub 2/O oxidation. In this oxidation process, only the strong Si-O bond which is perfectly resistant even to the strongly reductive ambient survives and a high integrity oxide film can be grown. From the results of the breakdown...
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