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The gate tunnelling current of MOSFETs is an important factor in modelling ultra-small devices. In this reported work, the gate tunnelling current in present-generation MOSFETs is studied. Presented is a model for the gate tunnelling current in MOSFETs having ultra-thin gate oxides. In the proposed model, the electron wavefunction at the semiconductor-oxide interface is calculated and inversion charge...
As integrated circuits (ICs) become more densely packed with transistors, the conventional MOSFETs approach their physical limits of operation. Thus many novel device structures are being extensively explored. As a substitute Ultra thin Nano scale MOSFETs are one of the potential candidates. It is very attractive one-dimensional material and is useful for future nanoelectronic applications. We have...
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