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Achieving glass‐like ultra‐low thermal conductivity in crystalline solids with high electrical conductivity, a crucial requirement for high‐performance thermoelectrics , continues to be a formidable challenge. A careful balance between electrical and thermal transport is essential for optimizing the thermoelectric performance. Despite this inherent trade‐off, the experimental realization of an ideal...
Maintaining high electron mobility in Si channels as the transistor feature sizes continue to decrease is important for the development of Si nanoelectronics. Here we propose a novel way for the enhancement of the phonon-limited electron mobility in Si ultra-thin films. The method works over the wide range of temperatures and does not require SiGe alloy under layers which deteriorate heat removal...
In this paper we investigate the mobility enhancement due to strain in bended NW MOSFETs. Stress of 200 MPa to 2 GPa, induced by thermal oxidation, is measured in suspended NW FETs by Raman spectroscopy. Mobility enhancement of more than 100% is observed. Performance gain of bended compared to non-bended structures is most pronounced in low field conditions and at low temperatures.
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