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As the fabrication process technology has moved from submicron to deep submicron region, it has become essential to minimize the leakage power and the variability of the design parameters such as delay and leakage. Although dual-Vt approach has been proposed for runtime leakage power reduction significantly without compromise in performance, it suffers from the limitation of complex fabrication process...
Buffer insertion plays an increasingly critical role on circuit performance and signal integrity, especially in deep submicron region. Buffer insertion stage is very important for buffering efficiency. Early buffer insertion (e.g. at the floorplanning stage) may cause misestimation due to unknown cell locations, on the other hand buffer insertion after placement or during global routing may tend to...
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