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In this paper, a GaN-based metal-semiconductor-metal planar inter-digitated varactor is analyzed. The quality factor of the inter-digitated varactor with finger width of 0.25μm and space between fingers of 7μm on sapphire is 31.9 at 100MHz, and the tunable capacitance ranges fro m 0.19pF to 0.89pF. The characteristics of this varactor with different finger's widths and spaces are analyzed. It is shown...
In this paper, we propose an air-bridge based on-chip suspended inductor for MMIC application. The quality factor of suspended inductor on sapphire is 10.6 at 4.0 GHz, which is improved by almost 50%, comparing with traditional air-bridge based inductor of the same size. The self-resonance frequency is also improved from 9 GHz to 10 GHz. Several key fabrication processes of this suspended inductor...
This paper discusses the optimization and fabrication of a high voltage p-channel extended drain MOSFET (ED-pMOSFET) using standard low cost 2.5 μm twin-tub CMOS technology for digital applications, with only one extra processing step. The ED-pMOSFET transistor has been optimized using 2D simulators attending both specific on-resistance and breakdown voltage. Extended drain ED-pMOSFET transistors...
In this paper, a novel high-voltage CMOS (HV-CMOS) structure and a compatible bulk-silicon (BS) CMOS process for color plasma display panel (PDP) data driver ICs have been proposed. The breakdown voltage and the current of the PDP data driver IC using this technology were 100 V and 42 mA, respectively. The rise and fall time of the new PDP data driver IC was 19 and 23 ns, respectively. The cost was...
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