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This paper demonstrates the utilization of gallium nitride (GaN) devices to achieve an ultrahigh efficiency in an isolated dc–dc converter. This paper presents the design and implementation of high-efficiency magnetics necessary to realize such an ultrahigh efficiency converter. Synchronous rectification is also implemented to further improve the efficiency. Compared to an equivalent silicon MOSFET,...
This work deals with the implementation and development of a PSpice based modeling platform for 10 kV/100 A SiC MOSFET power modules. The studied SiC MOSFET power module is composed of a total of 9 dies connected in parallel with 10.0 kV blocking voltage capability. The proposed model was implemented based on the already established McNutt Hefner model originally developed for discrete single-die...
This paper presents the evaluation of a 650 V GaN transistor which is used for a motor drive application. The influence of parasitic effects, e.g. cross conduction and stray inductances, in a GaN phase-leg configuration are analyzed by means of simulation. Additionally, experimental results of the switching transients are shown. Furthermore, measurement issues and other practical challenges are discussed.
The benefits of emerging wide-band gap semiconductors can only be utilized if the semiconductor is properly packaged. Capacitive coupling in the package causes electromagnetic interference during high dv/dt switching. This paper investigates the current flowing in the parasitic capacitance between the output node and the grounded heat sink for a custom silicon carbide power module. A circuit model...
Wide Band Gap (WBG) transistors using materials such as Gallium Nitride (GaN) and Silicon Carbide (SiC) offer superior electrical and thermal properties, as well as fast switching capability. However, the high dv/dt and high di/dt may cause ringing with the parasitic inductances and capacitances in the switching loop, increasing overshoot voltages and reducing confidence in the design. Also, making...
This paper presents the use of innovative high-voltage SiC diode technology in the development of a user configurable full-wave or half-wave rectifier bridge. The devices are of merged Junction-Barrier-Schottky (JBS) type to enable for optimum performance even in the presence of current surges, as demanded by the application. To contain the cost of the proposed solution, their packaging relies on...
This paper presents a high power density coupled tape-wound inductor consisting of nano-crystalline material used in a DC/DC converter. In a first step the comparison of the 2-phase coupled inductor (CI) with the 2-phase interleaved converter (SII) is presented. Second step is designing the CI ρ/η-pareto analysis. To test the device a high power density SiC-converter is designed. The experimentally...
In this paper, a novel full-SiC power module suitable for three-phase Current Source Inverter (CSI) applications is presented. Based on state-of-the-art CSI modules, the problems associated with layout asymmetry are analyzed through electromagnetic (Finite Element Analysis software) and electrical simulations (Spice environment). Prototypes of the power module layouts are fabricated and parasitic...
In the recent years, diamond Schottky diodes with high Figures of Merit have been demonstrated. Static and dynamic characteristics of diamond Schottky diodes are presented in this paper. The diamond substrate is associated with silicon MOSFETs in a power switching cell, showing promising switching characteristics. However, even if these diodes show a high current density, the effective total current...
Measuring PDIV with 50 Hz sinusoidal waveforms to find what happens using wide bandgap devices having slew rates of x 100 V/ns can give misleading results. Since PDIV tests using wide bandgap devices offers contradicting results, a probabilistic model is proposed to figure the probability density function of PDIV results. This is an intermediate step developing a statistical procedure enabling a more...
Wide bandgap semiconductors are promising regarding loss reduction and increase of switching frequency. In the specific case of two level power converter it has not been up to now clearly shown the potential of SiC and GaN in comparison with Si semiconductors. In this paper, a multi-variable analysis for different devices is carried out, considering system efficiency, heatsink size and output filter...
The authors present a low-cost, low-complexity measurement technique based on S-Parameters to characterize the intrinsic capacitances of power transistors at high voltages. In contrast to LCR-meter based standard solutions, which require at least three different measurement fixtures for that purpose, this method requires only one. Thus, measurement time and complexity of the transistor's characterization...
The objective of this paper is to analyze a novel high-speed integrated motor-compressor drive system and investigate the opportunities by using gallium nitride (GaN)-based inverters. The proposed integrated motor-compressor is a combination of electric machine and axial-flow compressor by shaping the rotor pole of the electric machine into airfoils. Hence, the proposed integrated motor-compressor...
Electrical insulation materials quality and reliability play a central role in providing the electrical machines reliable operation. It is well recognized that insulating system of low voltage motor fed by converter is exposed to electrical stresses arising from repetitive square waveform of supplying voltage while additional impact of temperature, vibrations and environmental operation conditions...
This paper investigates gate driver design challenges encountered due to the fast switching transients in medium voltage half bridge silicon carbide MOSFET power modules. The paper presents, design of a reduced isolation capacitance regulated DC-DC power supply and a gate driver with an active Miller clamp circuit for a 10 kV half bridge SiC MOSFET power module. Designed power supply and the gate...
A brief summary of the insulation issues associated with the use of power electronics in electrical drives is presented here. The key points that remain open and the perspectives regarding the introduction of wide band-gap devices in aircraft and electrical vehicles actuators are discussed, showing how the benefits brought about by these devices might be offset by insulation issues.
Wide bandgap (WBG) power electronic devices realized using silicon carbide(SiC) and gallium nitride (GaN) are increasingly replacing their silicon(Si) counterparts in power electronics applications. The obvious advantages of these devices with their higher switching speeds, lower on state resistance and high temperature operation over Si devices have aided in the paradigm shift towards wide bandgap...
This paper presents a concept for a compact high voltage generator based on a highly integrated power chain switching at frequencies above 500 kHz. The high frequency operation in combination with the high integration approach enable a reduction of volume and weight of HY-generators used in industrial or medical applications.
Medium voltage 10 kV Silicon Carbide MOSFETs, introduce challenges regarding converter design. Very high rate of voltage change and capacitive couplings to for example cooling systems cause increased electromagnetic interference. The aim of this paper is to accurately model the capacitive coupling to a heat sink and experimentally validate the model. An analytic model of the heat sink is developed...
There are problems with insulation failures in high-voltage transformers due to fast transient voltages. Within novel Solid-State Transformers (SST) this problem exists constitutionally because of the SSTs rectangular working voltages. Experiments and simulations have been performed to get accurate understanding of the phenomena. The results and theories are discussed in this paper.
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