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This article considers an approach to capacitance optimization of snubber capacitors in power converters based on series connection of power semiconductor devices (PSDs) by selecting their parameters. Studies of PSD parameters in the state of high conductivity revealed their high scatter. This results in significant temperature variations of their semiconductor structures. To decrease overvoltage...
Modern civilization is related to the increased use of electric energy for industry production, human mobility, and comfortable living. Highly efficient and reliable power electronic systems, which convert and process electric energy from one form to the other, are critical for smart grid and renewable energy systems. The power semiconductor device, as the cornerstone technology in a power electronics...
An analysis of variation of drain current (dID/dt) of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) in turn-on and turn-off under different temperatures has been performed in this paper. It is shown that the magnitude of turn-off dID/dt is temperature dependent and decreases with tempertature with a fixed supply voltage, load current and gate resistance. While,...
Multichip power modules use parallel connected chips to achieve high current rating. Due to a finite flexibility in a DBC layout, some electrical asymmetries will occur in the module. Parallel connected transistors will exhibit uneven static and dynamic current sharing due to these asymmetries. Especially important are the couplings between gate and power loops of individual transistors. Fast changing...
Dielectric Barrier Discharge (DBD) reactors are widely used for industrial ozone generation. Paper presents impact of voltage shape of different power supply topologies for DBD on ozone efficiency production. Results of five voltage shapes of three different power supply topologies were presented and discussed. Investigation shows that selection of voltage shape and as a result power supply topology...
The Self Turn-ON influences the turn-ON and short-circuit behaviour of the IGBT. This is a positive feedback by the IGBT on itself and increases its turn-ON speed. The strength of the effect depends on the gate structure's design. Therefore, IGBTs with different gate structures are investigated with TCAD simulations. Additionally, its influence during Fault under Load is investigated.
The ultra-low gate charge characteristics and low gate voltage limitation of a GaN enhancement mode HEMT in combination with stray circuit elements poses many challenges of driving them in power electronic applications. This paper investigates the effect of changing gate resistances and including a Zener diode for overvoltage protection in the gate circuit. The goal is to achieve low switching losses...
The Current-Direction Detection based on measurement of the load current can be used as static MOS-Control of the BIGT. As the gate-emitter voltage vge affects the ON-state characteristics of the BIGT in diode forward-conduction mode, it has to be adapted for optimised operation. In order to operate at low static losses vge has to be below threshold voltage in diode forward-conduction mode. The chosen...
A large area (150mm) high voltage (6.5kV) Reverse Conducting-Integrated Gate Commutated Thyristor (RC-IGCT) has been developed for low frequency high power electronics applications. The devices were fabricated with GCT to diode active area ratio of 1.4. The RC-IGCT wafers were designed with an outer ring gate structure to minimize the stray impedance for the gate signal and also to improve the thermal...
This paper introduces a control method for Reverse-Conducting (RC-)IGBTs which reduces the control dead time of RC-IGBT inverters. Switching measurements with 6.5 kV RC-IGBTs concerning the applicability of the introduced control method and the effect of a load current direction change during the desaturation pulse are presented.
This paper presents a new gate driver concept that consists of an integrated measurement of the junction temperature and the load current of a power module during inverter operation. For junction temperature measurement the gate driver identifies the temperature sensitive on-chip internal gate resistor by means of a small identification signal that is modulated onto the positive gate voltage. To determine...
Short-circuit detection is one important feature of a gate-drive unit and a solution without a collector sense is preferable. With monitoring the gate-emitter voltage, a short can be easily detected. A circuit, which detects and turns off the short, and measurements for different shorts on high-voltage IGBTs are presented.
The characteristics of pulse thyristors, which are viable for safe switching-on in series connection, are being discussed. The influence of turn-on delay distribution for thyristors in stack generated by overvoltages is being evaluated, including the «convergence» effect of turn-on delay distribution in series connection. There is shown suitability of new thyristor stacks for high current pulses commutation.
A hybrid switch configured by silicon insulated gate bipolar transistor (Si IGBT) and silicon carbide metal-oxide semiconductor field effect transistor (SiC MOSFET) have been investigated to be a cost effectiveness and high efficiency. In this paper, we aimed reducing the hybrid switch loss and expanding operation area of frequency and current. We measured dependency on various parameters to analyze...
The authors present a low-cost, low-complexity measurement technique based on S-Parameters to characterize the intrinsic capacitances of power transistors at high voltages. In contrast to LCR-meter based standard solutions, which require at least three different measurement fixtures for that purpose, this method requires only one. Thus, measurement time and complexity of the transistor's characterization...
Recently main requirements for power conversion system are further downsizing and higher efficiency. To satisfy these requirements, enhanced power density of power modules should be the key to succeed. In this paper, 3.3kV SiC-Hybrid module with High Power next Core package, which can realize enhanced power density, has been described.
This paper provides an analysis on the design, implementation and operation of Bi-Directional Switches (BDS) based on power semiconductor devices intended to replace Electro Mechanical Relays (EMR) in home appliances. Static and dynamic characterizations of test vehicles developed using different power device semiconductor technologies (TRIAC, Super Junction (SJ) MOSFET, IGBT_) are presented. At this...
This paper presents different experimental methods for measuring parasitic capacitances and inductances of direct copper bond (DBC) based power semiconductor modules. The found parasitics are compared with finite element simulations to evaluate their accuracy. A very good match of the simulated and measured stray capacitances is found. The parasitics, which are found via simulations and experiments,...
A new ultra-low inductive 600 V / 200 A half-bridge power module, called LinkPack module, with integrated DC-link capacitors and common mode EMI shielding was realised. LinkPack module contains intentionally SiC-Mosfets, however it is also possible to equip Si-IGBTs and Si-diodes respectively SiC-diodes. This allows the realisation of full SiC-Mosfets modules, hybrid SiC modules and Si-IGBT / Si-diodes...
This paper addresses the development of electro-thermal models able to accurately predict the thermal behaviour of power modules in AC drives. The model would be implemented in the digital signal processor used to control the drive, operating therefore on line. FEM will be used for the design and calibration of the models. The performance of the proposed methods will be validated experimentally.
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