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Second generation HVHBT GaAs technology developed for use in wireless basestation applications is shown to be suitable for use in symmetric and asymmetric Doherty efficiency enhancement solutions. Each solution demonstrates the unique high efficiency characteristic of HVHBT GaAs technology where average power efficiencies approaching 60% have been achieved in both configurations. This paper will review...
We describe the optimization of a 55 V breakdown LDMOS embedded in a 0.18 micron based power management platform. The devices self aligned structure allow the accessing low RdsOn values of 50 mohm mm2. We focus on the effects of gate poly over STI overlap which can increase the breakdown voltage by 10 V and reduce maximum substrate current 5 fold while not affecting the specific RdsOn.
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