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A power amplifier for a frequency range of 11–13 GHz that is incorporated in 0.35 SiGe-technology is presented in this letter. The two-stage push-pull amplifier uses monolithically integrated transformers for input and interstage matching and a monolithically integrated modified LC-balun as an output—matching network. For stabilization purposes and gain improvement in the operating frequency...
In this paper a fully monolithically integrated power amplifier for X-band is presented. The push-pull amplifier uses an on-chip transformer for input matching, an autotransformer with capacitive divider for interstage matching, and an LC-balun for output matching. It does not require any external matching circuits. The power amplifier is implemented in a 0.35 μm SiGe bipolar technology. At 10 GHz...
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