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Alloy seedlayers for copper back-end of line interconnects have become common at technology groundrules of 45 nm and below, due to reliability requirements. The key requirement of the minority alloy component (e.g., Al or manganese, also referred to as the “dopant”) is that it segregates to the copper (Cu)/dielectric cap layer interface in order to promote adhesion between the Cu in the line and the...
A metallic in-situ stress sensor is modified to address electrical polarization and thus to locally heat this sensor by Joule effect. By coupling SEM electrical nano-probing with analytical modeling and multiphysics Finite Element Method (FEM), the thermo-mechanical properties are identified. As a result, a tensile stress state of 190 MPa, coefficient of thermal expansion of 22.5×10−6 K−1 and thermal...
Stress investigations have been carried out on SiGe HBTs from STMicroelectronics BiCMOS9MW technology. The strain created by the stack of metal connections impacts the base bandgap of the transistors: from the reference to the denser dummies structure, a 9.1 meV bandgap energy variation is pointed out. Dummies structures were embedded for both DC and HF characterizations which showed a 25% increase...
A novel CMOS-MEMS composite ring resonator capable of a dual-mode operation has been proposed to enable self-temperature sensing in a single device. To maximize the temperature sensitivity between the dual modes, two resonant modes of a single resonator vibrating in orthogonal axes (i.e., inplane and out-of-plane) are chosen due to the large difference of their temperature coefficients of frequency...
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