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We report the effect of hydrogen annealing on the gate-leakage-current and switching characteristics of metal-alumina-nitride-oxide-silicon (MANOS) capacitors by analyzing their negative-/positive-bias instability (NBI/PBI). One sample, namely, A, is annealed with rapid thermal annealing (RTA), and the other sample, namely, B, is first annealed with RTA and then further annealed in a furnace, using...
Bias temperature instability has attracted a lot of attention as a dominant degradation mechanism in modern MOS transistors. Despite considerable effort, the exact physics behind this mechanisms are still controversial. We discuss some numerical aspects of our recently presented model which is capable of reproducing the main features of the phenomenon. Furthermore, we demonstrate how the model can...
Germanium pMOSFETs with silicon-passivated interface (Ge/Si/SiO2/HfO2) are investigated for negative bias temperature instability (NBTI). Even though a high initial interface state density is measured, the stack shows a robustness toward NBTI stress, and the 10 year lifetime is ensured with a gate voltage overdrive VG-Vth = -1.2 V.
Many recent publications discussing the stress and recovery behavior of bias temperature instability (BTI) have suggested the existence of two components contributing to the phenomenon. One of these components was found to be quickly relaxing while the other was only slowly relaxing or even permanent. Curiously, although the most likely suggested mechanisms are the generation of interface states and...
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