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An atmosphere pressure sensor is developed using SOI (silicon on insulator) wafer based on MEMS technology. In this sensor, the device layer of SOI wafer is etched as the stress detection resistor. And the depth of pressure cavity is controlled by wet etching time. The whole chip is finished by anodic bonding with SOI wafer and pyrex 7740 glass wafer. Also, a kind of plastic packaging for pressure...
Micro Electro Mechanical System pressure sensors have been simulated with different structures for obtaining wider operation range with better sensitivity. The performance has been simulated and analyzed for silicon and SOI (Silicon-on-Insulator) pressure sensors. The performance of silicon and SOI pressure sensor at a given pressure and temperature are compared. Different diaphragms structures, were...
A kind of micro piezoresistive pressure sensor with stable performances under high temperature is designed based on the silicon on insulator (SOI). Through analyzing the stress distribution of diaphragm by finite element method (FEM), the model of structure was established. The fabrication operated on SOI wafer, which can be used in extreme high temperature environments, and applied the technology...
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