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The impact of strain induced oxide trap charge on the performance and reliability of contact etch stop SiN layer capped, fully silicided metal gate, fully depleted SOI (FDSOI) CMOSFET is investigated. For an ultra thin nitride oxide, the position of these oxide trap charge can be evaluated by variable frequency noise spectrum and variable frequency charge pumping technique. Gate oxide film bending...
The results are reported of an experimental study of the hot carrier (HC) and bias-temperature-instability (BTI) reliability of MuGFETS, fabricated on SOI wafers with silicon oxide and silicon nitride buried layers. N- and P-channel devices of 65 nm long and 42 nm or 32 nm wide channels were stressed and measured at room temperature and at 125degC. A complicated picture emerges: HC degradation is...
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