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In this paper, the material and electrical properties of newly developed gate dielectrics were investigated by SIMS depth profile. NMOS transistor structures were fabricated by thermally grown radical oxidation (TGRO) in a batch type thermal processor and densified by plasma re-oxidation in a slot processor, followed by post oxidation anneal process to cure the plasma damage and nitridation in N2...
The effects of high-level uniaxial tensile strain on the performance of gate-all-around (GAA) Si n-MOSFETs are investigated for nanowire (NW) diameters down to 8 nm. Suspended strained-Si NWs with ~2-GPa uniaxial tension were realized by nanopatterning-induced unilateral relaxation of ultrathin-body 30% strained-Si-directly-on-insulator substrates. Based on these NWs, GAA strained-Si n-MOSFETs were...
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