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In this paper, we propose and investigate a novel device structure for silicon-on-ferroelectric Tunnel FET (SOFTFET) based on the negative capacitance effect of the ferroelectric layer. The conduction mechanism of proposed device is based on the combined effect of two mechanisms namely, tunnelling and negative capacitance effect. Thus, it achieves a steep subthreshold slope (SS) of 13.9 mV/dec at...
The electrical property of very small floating island whose diameter is less than the de Broglie length is numerically investigated without fitting parameters. In general, it is difficult to well define the capacitance of very small floating islands. In this paper, instead of using the capacitance of islands, the kicking algorithm is applied for simulating the single-electron phenomena of spherical...
Plasma-exposed Si surface related to Si recess in source/drain region was investigated in detail for various superposed bias configurations with frequencies of 13.56 MHz and 400 kHz. Two different bias powers were utilized by an inductively coupled plasma reactor (ICP). The surface layer (SL) and the interfacial layer between the SL and Si substrate (IL) were analyzed by spectroscopic ellipsometry...
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