The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
IDLIN shift due to NBTI is measured using UF-OTF IDLIN method in PNO, RTNO and RTNO+PN SiON p-MOSFETs having a wide range of EOT and %N. Time evolution of IDLIN shift at different stress EOX and T is modeled from ultra-short to long stress time using non-dispersive H/H2 RD model governed NIT and dispersive Nh components. NIT and Nh model parameters show consistent EOX and T dependent behavior across...
The paper shows that a minimum of two traps is required to cause breakdown in SiON films down to 10A. At least one trap must be an interface state and at least one must be a bulk state. At low voltages, the rate limiting step for breakdown is the generation of interface traps and is controlled by the release of H0
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.