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The benefit of La-Al-O higher-k gate dielectrics is maximized by optimizing the Al/(La+Al) atomic ratio. The Al/(La+Al) atomic ratio modulates the band gap, dielectric constant, and interface dipoles, resulting in change of energy band alignment. The La-Al-O film with an Al/(La+Al) atomic ratio of 0.25 yields a maximum leakage current reduction exceeding HfO2 and La2O3, owing to the optimized band...
Porous low-k dielectrics reliability in interconnect is a major concern for sub 45 nm technology nodes. Low-k dielectric ageing characterization during stress is becoming a key point to improve low-k interconnect robustness. In this context, the leakage and especially the capacitance shifts under electrical stress are analyzed in this paper. Four dielectric ageing mechanisms potentially responsible...
The effect of reducing the homogeneous part of the monosilane oxidation process by reducing the process pressure on the properties of the SiO2 layers was investigated. This led to a reduction of the surface layers roughness, decreasing the number and the size of inclusions, reducing the fixed oxide charge, permittivity at the temperature of liquid nitrogen, and leakage currents through the insulator.
In this work 7 nm thin Ta2O5/SiOxNy insulating stacks on Si were studied by a combination of C-V If and leakage current (I-V) measurements, based on the comprehensive model involving different conduction mechanisms in Ta2O5 and the interfacial SiOxNy layer. Equivalent oxide thickness (EOT) was determined using the extrapolation method for leaky high-k dielectrics proposed by Kar. Interface state densities...
In this study, we have applied atomic layer deposition (ALD) for the fabrication of CNT-FET biosensors.Biosensor operation was confirmed by CNT-FETs fabricated using the ALD passivation film. CNTs were grown on a SiO2(100 nm)/p+-Si substrate by alcohol catalytic chemical vapor deposition. Following the fabrication of the CNT-FETs, HfO2 film (50 nm) with a large dielectric constant was deposited on...
The reaction mechanism of nitrogen atoms with Si was investigated based on first principles calculations and experimental results to realize ultra thin SiN-based SiON films with high insulation and good interfacial properties. Incorporation rate of nitrogen atoms into Si has a great influence on arranging 3-fold coordinated N atoms uniformly. By arranging 3-fold coordinated N atoms into the Si sub-surface...
We have developed a new Cu-barrier dielectric film suitable for Cu/low-k integration. The film has an SiO/sub 2/ composition and is deposited using trimethoxysilane and N/sub 2/O chemistry. The Cu barrier properties of the film are as good as those of the conventional barrier material (P-SiN). The dielectric constant (k) of the film is 3.9, which is about half the dielectric constant of P-SiN film...
The electrical stability and reliability of the Trimethylsilane (3MS) based a-SiC:H (SiC) film was investigated for the first time. Capacitance-Voltage (C-V) characteristic instability was observed due to polarization at high electrical field and electron injection at low electrical field. By adding nitrogen content in the film, the dielectric constant and leakage current are reduced but the time...
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